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  • 1
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 2 (1995), S. 196-200 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The sensitivity and linearity of infrared reflection absorption spectroscopy (IRAS) has been significantly improved by using a buried-metal-layer (BML) substrate having an SiO2(15 nm)/Al(200 nm)/Si(100) structure, instead of a plain Si(100) substrate. By applying this BML-IRAS technique to the in situ observation of synchrotron-radiation-induced chemical vapor deposition of amorphous Si (a-Si) on an SiO2 surface using Si2H6 gas, the vibrational spectra of surface SiHn species in this reaction system have been observed for the first time with sufficient sensitivity for submonolayer coverage. The main silicon hydride species after deposition at 423 K are surface SiH2 and SiH. Surface SiH3 and SiH2 are observed to be easily decomposed by synchrotron radiation irradiation. The decomposition rate of SiH by synchrotron radiation irradiation is much slower than those of SiH2 and SiH3.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 155-160 
    ISSN: 0142-2421
    Keywords: a new surface analytical technique ; SIMS ; ESDMS ; SIMS-ESDMS technique ; depth profiling ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Electron-stimulated desorption mass spectrometry (ESDMS), a new technique based on the mass analysis of ions desorbed by a high-energy (several keV) electron beam, has analytical features that complement SIMS. The ESDMS has high sensitivity in the surface analysis of both adsorbates and the first one or two monolayers of substrate constituents. The variations in ESDMS signal intensities and in the sampling surface depth with time were negligible even in a one-monolayer sample. Using this combined SIMS-ESDMS technique, depth profiling analysis was performed for several different metal layers deposited on wafers and for a boron-implanted wafer. The sample depth was changed by sputtering with an ion beam, and the surface analysis at each depth was done by ESDMS with the ion beam off. The ion profiles by SIMS-ESDMS closely coincided with the SIMS profiles. The SIMS-ESDMS technique should be particularly useful for thin layered samples, because the signal-to-noise ratio can be improved by accumulating the ESDMS signals for as long as required without changing the sampling depth under continuous bombardment by the electron beam. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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