Publication Date:
2012-04-24
Description:
Acceptor doping of zinc oxide thin films prepared by radio-frequency diode sputtering, using nitrogen as a doping source, was realized during sputtering in Ar/N 2 gas mixture or via ion implantation of 180 keV N ions. Effects of N doping and (Al,Ga):N co-doping on the films' properties have been studied. Highly resistive ZnO:N films with p -type carrier concentrations ranging 10 14 ÷10 15 cm −3 and more random orientation of the crystallites were obtained. The co-doped ZnO:Al:N and ZnO:Ga:N films maintained a c -axis texture in the direction of the surface normal. The carrier concentration of the p -type films was on the order of 10 17 ÷10 18 cm −3 . 180 keV N ions were implanted in sputtered ZnO:Ga thin films. The implant doses varied 10 15 ÷2×10 16 cm −2 . Annealing studies were performed under O 2 and N 2 ambient at different temperatures and ti...
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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