Publication Date:
2014-08-23
Description:
Metal-ferroelectric-insulator-semiconductor (MFIS) devices were successfully fabricated using poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly (methyl methacrylate): titanium dioxide (PMMA:TiO 2 ) nanocomposite as ferroelectric and insulator films, respectively on n-type silicon (n-Si) substrate. Both ferroelectric and insulator films were prepared by sol-gel spin coating method. The electrical behaviour of metal-ferroelectric-metal (MFM) structure with PVDF-TrFE film and metal-insulator- metal (MIM) structure PMMA:TiO 2 film exhibited different current characteristics. The capacitance of the MFIS devices was found to be 0.42 and 0.29 nF at frequency of 1kHz and 1 MHz respectively. Meanwhile, the dielectric loss values are constant (~60 × 10 −3 ) in the frequency range from 100 Hz to 100 kHz. I-V results for MFIS are much higher than MIM and MFM is due to there is a trapped holes/electron located at the semiconductor- insulator ...
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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