Publication Date:
2014-06-18
Description:
In this study, the strong dependence of structural, optical and electrical properties of ZnO on the concentration of Zn/O has been observed. Four samples of ZnO with Zn/O-ratio of 1.08, 1.12, 1.17 and 1.22 were grown by molecular beam epitaxy. The x-ray diffraction (XRD) pattern demonstrates that intensity of (002) peak and crystallite size decreases as the Zn/O ratio increases in the samples, suggesting that the crystallinity of the samples degraded. In Raman spectra the E high 2 mode shifts towards higher frequency with increasing the concentration of Zn in films. According to electrical measurements, the VO-Zni act as donor defects in ZnO because the carrier concentration increases and resistivity decreases with increasing the Zn/O ratio in the samples.
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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