Publication Date:
2001-01-01
Description:
A careful calibration of a continuum process simulator is normally required to achieve a good agreement between simulated results and experimental dopant profiles. However, the validity of such a calibration procedure is often limited to a particular technology. By taking into account a number of physics-based models and experimental results available in literature, the predicting capability of the process simulation has been conveniently improved. In particular, this paper shows how concentration-depth profiles from two different CMOS technologies have been successfully reproduced with a unique set of fitting parameters.
Print ISSN:
1065-514X
Electronic ISSN:
1563-5171
Topics:
Electrical Engineering, Measurement and Control Technology
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