ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Springer  (114)
  • Frontiers Media  (8)
  • 1
    Electronic Resource
    Electronic Resource
    In-beam magnetization measurements of thin Fe foils and simultaneous observation of the transient magnetic field at Pd ions (1991)
    Springer
    The European physical journal 340 (1991), S. 333-337 
    Details
    ISSN: 1434-601X
    Keywords: 21.10.Ky ; 25.70.−z ; 29.30−h
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The well established phenomenon of heavy ion beam induced attenuations of transient magnetic fields (TF) was studied by measuring the in-beam magnetization of bombarded Fe foils employing the magneto-optical Kerr-effect. Whereas the macroscopic magnetization did not show any deterioration, the simultaneously measured TF of recoiling108Pd(2+) ions was found to be substantially attenuated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01294682
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Impurity-defect configurations in ion-irradiated copper studied by the DPAC-technique with111In (1978)
    Springer
    The European physical journal 32 (1978), S. 59-66 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The structure and dynamics of lattice defects in copper are investigated. The defects have been produced by irradiation with heavy ions of 350 keV between 85 K and 300 K. Three different defect configurations are distinguished by the time differential perturbed angular correlation technique (DPAC) with111In as radioactive probe. Their electric quadrupole coupling constantsν Q =e 2 Qq zz /h areν Q1=116(2)MHz,ν Q2=181(3)MHz andν Q3=52(1)MHz. The defects characterized byν Q1 andν Q2 are observed in the temperature range of recovery stage III. The appearance ofν Q3 is closely correlated with recovery stage V. The symmetry axis of the electric field gradient associated with this defect-111In configuration points along a crystallographic 〈111〉 direction. We attribute this defect to a planar faulted loop, presumably of vacancy type. The influence of irradiating particles and dose on the defect configurations is analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01322187
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Lattice defects in cadmium studied by the angular correlation method (1979)
    Springer
    The European physical journal 33 (1979), S. 155-162 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The perturbed angular correlation of the 173 keV—247 keVγ-γ-cascade in111Cd was measured for proton-irradiated and quenched cadmium as a function of the annealing temperature. Three distinct defect configurations were identified by the quadrupole interaction frequencies:D 1 with $$\left| {v_Q } \right| = \left| {\frac{{eQV_{zz} }}{h}} \right| = 103\left( 3 \right)$$ MHz visible for annealing temperaturesT A between 110 K and 130 K,D 2 with |v Q | between 4 and 22 MHz observed for 110 K ≦T A ≦150 K, andD 3 with no electric field gradient. The fractionD 3 is seen from 77 K to room temperature. The defect configurationsD 1 andD 2 are of vacancy type. It is argued thatD 1 originates from simple defect structures (probably mono- or divacancies) whileD 2 is attributed to small vacancy agglomerates. Because of its larger stability,D 3 is ascribed to defect loops. The experiment shows clearly that a vacancy-like defect is mobile in recovery stage III in Cd.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01323688
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Über einen anodischen Sperreffekt am passiven Titan (1962)
    Springer
    Naturwissenschaften 49 (1962), S. 154-155 
    Details
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00640128
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050996
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Hydrogen concentration in chalcopyrite thin-film solar cells (2000)
    Springer
    Applied physics 70 (2000), S. 617-623 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55.Ln; 73.50.Pz; 82.80.Ej
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. A survey of the hydrogen concentration distribution in the various layers of chalcopyrite solar cells is presented. Depth profiles were measured by the nuclear reaction analysis method for the glass substrate, Mo back contact, Cu(In,Ga)S2 or Cu(In,Ga)Se2 absorber, CdS buffer, and ZnO window layer. We find that hydrogen is present in all layers in concentrations exceeding the solubility of hydrogen in the corresponding crystalline bulk materials. This indicates that the deposition process and the polycrystallinity of the layers favor the uptake of hydrogen. The measured concentrations range from some 1018 H/cm3 in the absorber up to some 1021 H/cm3 in the CdS buffer layer. Effects of annealing at elevated temperatures are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050003
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Effects of weather on the cyclic patterns of colony attendance in the Cape petrel Daption capense (1996)
    Springer
    Polar biology 16 (1996), S. 339-344 
    Details
    ISSN: 1432-2056
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Colony attendance of Cape petrels on Nelson Island, South Shetland Islands, Antarctica, fluctuated in a non-random pattern. In the pre-breeding period a relatively weak cycle of about 6 days was observed. Low attendance was associated with brief periods of either SE wind or strong wind, the effects of which lasted 2 days. During breeding, regular attendance cycles were approximately twice as long (8 days) as the average incubation shift (3.8 days), which may have resulted from synchronization of unemployed birds not engaged in incubation. Breeding attendance was lowered on 2 days after strong wind and on days with SE wind, but only wind speed showed a significant effect when both variables were considered. Post-breeding colony attendance showed a continuation of the rhythm established during breeding, but with the majority of birds participating. Correlations found between wind factors and colony attendance suggest that some weather characteristics, which themselves were not truly cyclic, could act to synchronize the endogenous rhythms of individual birds. Seasonal changes of wind effects on colony attendance could be interpreted in terms of foraging behaviour, i.e. as a consequence of the feeding grounds in summer being not restricted by sea ice to one particular direction from the colony.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003000050062
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.70.Tm; 79.20.Nc; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the 15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Nc ; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Atomic nitrogen in C60:N@C60 (1998)
    Springer
    Applied physics 66 (1998), S. 287-292 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 36.40.Cg, 61.46.+w, 76.30.Rn, 82.80.Bg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 60 (atomic nitrogen inside C60) is produced by ion implantation. Two different production methods are employed: Kaufman ion source and glow discharge. After the bombarded material is dissolved in toluene or CS2 and is filtered, several milligrams of C60 containing N@C60 in a concentration of 10-4 to 10-5 are obtained. N@C60 gives a very clear hyperfine-split electron paramagnetic resonance signal. The most prominent features of N@C60 are: (i) Nitrogen in C60 keeps its atomic electronic configuration and occupies the on-center position. (ii) N@C60 is stable at ambient conditions, the thermal instability starts at 260 °C. (iii) The complex survives exohedral addition reactions and is a sensitive detector of cage distortions caused by addends. (iv) C60 and N@C60 exhibit slightly different retention times in column chromatography, thus permitting an enrichment of N@C60 by this method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050668
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...