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  • 1
    Electronic Resource
    Electronic Resource
    Electron impact spectroscopy of silane and germanef a@f ) (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 2909-2917 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Electron impact spectra of silane and germane have been recorded using electrons of 200 eV incidence at scattering angles of ∼2°–9°. The range of energy losses covers the entire region of single electron excitation from the valence shell. In the bound state spectrum evidence is presented supporting the existence of two valence transitions in addition to anticipated s, p, and d Rydberg transitions. The 9° spectra reveal much structural detail in the ∼4 eV energy range preceding the 2A1 ion state. The most prominent band consists of a superposition of an optically allowed valence excitation and a symmetry forbidden Rydberg transition. The remaining peaks may be members of vibrational progressions belonging to either [d(t2), a1], [p, a1] ← (a1)2 dipole allowed or [d(e), a1], [s,a1] ← (a1)2 dipole forbidden channels. Of these two possibilities the evidence presented here favors the latter choice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448238
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  • 2
    Electronic Resource
    Electronic Resource
    Novel electrical and annealing properties of defects in electron irradiated silicon p+-n junctions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1535-1540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel results on defect annealing behavior and minority-carrier lifetime control in electron irradiated silicon p+-n junctions are presented. Two mechanisms are found to be involved in the annealing process of the divacancies; one dominates in the lower temperature range (from 240 to 300 °C) and the other dominates in the higher temperature range (from 320 to 360 °C). A defect labeld as E3 with an energy level at 0.37 eV below the conduction band is found to be an efficient recombination channel responsible for minority carrier lifetime control. The activation energy for dissociation of the defect E3 obtained from the annealing study is 1.7 eV, and the frequency factor is 2.8×109 s−1. Annealing of electron irradiated samples at about 300 °C, or performing the electron irradiation at a similar high temperature is found to increase the concentration of the defect E3, and stabilize the carrier lifetime. These processes might be useful to improve the thermal stability of devices like high-voltage rectifiers and thyristors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346629
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of defect states induced by air plasma process in n/n+ epitaxial silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1520-1525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of radio frequency (rf) air plasma process-induced defect states in 50 Ω cm n/n+ epitaxial silicon are investigated by junction capacitance techniques. Capacitance-voltage measurements reveal the presence of a thin oxide layer of about 180 A(ring) on the 30-min plasma treated silicon sample. Deep level transient spectroscopy shows the existence of various defects in the sample. These consists of a dominant bulk electron trap labelled as E(0.46) at 0.46 eV below the conduction band, as well as continuously distributed interface states. The spectral dependence of the optical cross section for the defect levels were measured by deep level optical spectroscopy. A simple analysis indicates that a phonon mode ((h-dash-bar)ωp=28 meV) couples to the defect E(0.46). Its electron-phonon coupling strength is rather weak with a Franck–Condon shift of 0.04 eV. Defect E(0.46) anneals out at a fairly low temperature of about 120 °C. Etching off the oxide layer in a diluted HF solution was found to eliminate the E(0.46) defect level. This is tentatively explained as due to passivation of the defect E(0.46) by hydrogen from the HF solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346627
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  • 4
    Electronic Resource
    Electronic Resource
    High-temperature annealing behavior of μτ products of electrons and holes in a-Si:H (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 791-795 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mobility-lifetime products of electrons and holes [(μτ)e and (μτ)h] in undoped hydrogenated amorphous silicon samples have been studied by photoconductivity and ambipolar diffusion length measurements. The density of dangling bonds Nd in the samples is changed over a range of 3×1015–2×1018 cm−3 by annealing at high temperatures. Nd and the Urbach tail slope Eov have been determined by the constant photocurrent method. In addition, the optical gap, the activation energy of dark conductivity, and the exponent governing the intensity dependence of σpc have been measured. The results show that there is a correlation between Nd and Eov which is consistent with equilibrium theory. (μτ)e and (μτ)h change in quite different ways as Nd increases, namely, (μτ)e decreases as a linear function of the inverse of Nd. However, (μτ)h remains almost constant when Nd≤5×1016 cm−3, then decreases fast for higher Nd. The asymmetric dependence of transport properties of electrons and holes on Nd suggests that for electrons recombination through dangling bond states is dominant; but, for holes, recombination mainly proceeds through deep band tail states, especially when Nd is relatively low.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351345
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  • 5
    Electronic Resource
    Electronic Resource
    A plasma etching-induced defect state in electron-irradiated n-type bulk section (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 897-899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect states induced by radio frequency air plasma etching process in n-type bulk silicon have been studied. Deep level transient spectroscopy shows that a deep center with a small electron capture cross section σtn =1.3×10−20 cm−3 and an energy level at 0.41 eV below the conduction band was induced by plasma treatment of previously electron-irradiated Si samples. The spectral dependence of optical cross sections for this defect level was measured by deep level optical spectroscopy, showing that the defect has a strong electron-phonon coupling with a Franck–Condon shift of about 0.4 eV, and that the defect core is repulsive for electrons. The defect anneals out above 400 K, and is also slightly unstable at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346755
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  • 6
    Electronic Resource
    Electronic Resource
    Metallic ferromagnetism in Ni-doped La0.7Sr0.3CoO3 (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 519-521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure, magnetization, and electrical transport of perovskite cobaltites La0.7Sr0.3Co1−yNiyO3 have been studied. It is found that the substitution of Ni for Co induces no apparent changes in bond length and angle in the Co(Ni)–O network, and only moderately suppresses the ferromagnetism. Moreover, a retention of the metallic conduction has been observed from y=0 to 0.2, which is in strong contrast to the reported insulating state of the other Co site doped La0.7Sr0.3CoO3. A double-exchange-like interaction between Ni ion and its neighboring Co ion is suggested to explain the experimental results. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416131
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties of RFe11.3Nb0.7 compounds (R=rare earth) (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4684-4686 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and magnetic properties of RFe11.3Nb0.7 compounds with rare-earth elements (R=Y, Sm, Gd, Tb, Dy, Ho, and Er) have been investigated. The Curie temperature increases for R=Sm–Gd, then decreases from R=Gd to Er. In the compound with R=Tb, with increasing temperature, a spin reorientation from an easy magnetization direction in the plane to an easy cone occurs at 365 K. In the compound with R=Er, a spin reorientation from easy plane to easy axis is found at about 40 K. Two spin reorientations take place in the compound with R=Dy, from easy plane to a complex structure at 125 K and from complex structure to easy axis at 210 K. At room temperature, the easy magnetization direction is along the c axis for R=Y, Sm, Gd, Dy, Ho, and Er, and in the plane for R=Tb. Studies of the magnetic anisotropy in YFe11.3Nb0.7 and GdFe11.3Nb0.7 point out that the Fe sublattice anisotropy is of easy axis type. In HoFe11.3Nb0.7, a first-order magnetization process takes place below 150 K when an external magnetic field is applied along the hard magnetization direction. The exchange-interaction constants JR–Fe decreases with increasing atomic number of R, as is generally found in rare-earth transition-metal compounds. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370447
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  • 8
    Electronic Resource
    Electronic Resource
    Cross sections for 16O(He,He)16O resonant elastic scattering and application to elemental analysis of YBa2Cu4O8 and Nd1+xBa2−xCu3O7−δ films grown on SrTiO3 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 14-20 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The differential cross sections for 16O(He,He)16O resonant elastic scattering at 3.034 and 3.078 MeV have been measured using stoichiometric thin (100 A(ring)) and thick (6000 A(ring)) SiO2 layers formed on Si(100) wafers by thermal oxidation at 900 °C under H2 and O2 flows. We have determined the resonance widths (Γ) and interaction radii (a), which are the parameters defining the cross sections in the partial wave analysis, by best fitting the angular and energy dependent scattering yields from oxygen. A computer simulation program for Rutherford backscattering including the 16O(He,He)16O resonant scattering has been synthesized and applied to the elemental analysis of thin YBa2Cu4O8 and Nd1+xBa2−xCu3O7−δ films grown on SrTiO3 substrates. The present elemental analysis is compared with the transition temperatures of superconductivity (Tc) in the context of the oxygen deficiency. The accuracy of oxygen content is estimated to be better than 0.1 (a few %). How to improve the accuracies of the elemental analysis, in particular the oxygen content, is discussed in detail. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360948
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetoresistivity below Tc in silver-clad Bi1.8Pb0.4Sr2Ca2Cu3Oy tape (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2613-2617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the magnetoresistance curves of a silver-clad Bi (2223) tape below critical temperature Tc over a magnetic field range up to 8 T. At temperatures well below Tc the magnetoresistive transition can be well described by a thermally activated flux flow (TAFF) process. The activation energies inferred from such dissipation measurements are found to have the form U=U0+U' (H,T), where U0 is magnetic field and temperature independent, U' (H,T) is proportional to (1−T/Tc)n/H. At temperatures very close to Tc the TAFF dissipation can no longer be found and the magnetoresistance seems to be determined by the combination of viscous flux flow and thermal fluctuation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358725
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  • 10
    Electronic Resource
    Electronic Resource
    Electromigration failure in a finite conductor with a single blocking boundary (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7305-7310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The (one-dimensional) electromigration boundary-value problem is considered for the case of a single blocking boundary with a constant vacancy supply at the other boundary. Using the drift/diffusion model expressed by the Fokker–Planck equation, we find that the saturation time (tsat) increases exponentially with current density (j) and not as j−2, as has been suggested. However, it is not the saturation time which determines the lifetime (tbd); it is the time to reach some critical vacancy concentration (c*). In agreement with experimental results and numerical calculations, we find that tbd∼j−2. We also find that tbd∼c*. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358018
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