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  • 1
    Digitale Medien
    Digitale Medien
    Oxygen doping in close-spaced-sublimed CdTe thin films for photovoltaic cells (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3607-3609 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Efficient CdTe/CdS thin film solar cells have been the recent focus, in which the CdTe layers were reported by close-spaced sublimation, and oxygen was used to control the p-type conductivity of the deposited films. Both the fundamental gap and the impurity level were determined by the wavelength modulation reflectance spectroscopy, which demonstrates that while oxygen atoms have an ionization energy of about 0.1 eV, they do not behave as a simple shallow acceptor. This finding is supported by the electrical characterization. The oxygen concentration incorporated in the CdTe thin films were found to be in the range of 1019–1020 cm−3 by the IR measurements, while a carrier concentration between 1010 and 1012 cm−3 was obtained by Hall measurements.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336792
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  • 2
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    Multiphonon absorption in InP (1987)
    Elsevier
    Details
    Publikationsdatum: 1987-01-01
    Print ISSN: 0038-1098
    Digitale ISSN: 1879-2766
    Thema: Physik
    Publiziert von Elsevier
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    AKTUELLE ARTIKEL
  • 3
    Digitale Medien
    Digitale Medien
    Rotational analysis of A˜ 2A1↔X˜ 2E electronic transition of the jet-cooled methylthio radical (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 6852-6857 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A set of molecular parameters describing both the X˜ and A˜ states of CH3S, has been obtained by a joint fitting of the rotationally resolved electronic transitions observed in a free-jet-cooled laser-induced fluorescence study of CH3S and an earlier microwave study of its X˜ state. The present work shows that because of incomplete information, nearly all of the previously reported molecular parameters for CH3S must be significantly revised. The present observations show an unusual electronic structure for the radical, characterized by a short C–S bond distance and peculiar methyl group geometry in the ground state. The C–S bond is observed to lengthen markedly in the excited A˜ state.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.456258
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  • 4
    Digitale Medien
    Digitale Medien
    Spectroscopic characterization of mesogen order in discotic liquid crystal (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 5950-5955 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Infrared and Raman spectra of the discotic liquid crystal molecules benzene–hexa-hexanoate (BH6), benzene–hexa-heptanoate (BH7), benzene–hexa-octanoate (BH8), and benzene–hexa-nananoate (BH9), and of mixtures of BH7 with BH8, are reported as a function of temperature. The 1615 cm−1 infrared band is strong in the Raman spectrum of BH7 and is taken as a characteristic of and diagnostic for central core disorder in all these molecules and mixtures. The aliphatic side chains are shown to disorder at much lower temperatures than the central core, and order in the central core is shown to remain throughout the liquid crystalline region.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.455546
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  • 5
    Digitale Medien
    Digitale Medien
    The rotational energy accommodation of NO formed in the catalytic oxidation of NH3 over Pt(111) (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 2861-2865 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: Rotational energy distributions of the desorbing NO product from the NH3+O2 reaction on a Pt(111) single crystal have been measured using the laser-induced fluorescence technique in conjunction with an UHV apparatus. Over the surface temperature range 800–1300 K, the rotational temperature of NO was found to remain virtually constant near 400 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.454990
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  • 6
    Digitale Medien
    Digitale Medien
    Hydrogenation and annealing kinetics of group-III acceptors in oxidized silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5148-5161 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Acceptor (B, Al, Ga, and In) density versus time curves during avalanche electron injection (AEI) and constant-temperature thermal annealing experiments obtained from metal-oxide-silicon capacitors (MOSCs) show two distinguishable phases. The time dependence of the acceptor density during AEI shows an initial delay due to electron-impact release of hydrogen trapped in the gate conductor and oxide layers and a long-time decay due to the thermal capture and electron-impact emission of the atomic hydrogen at the group-III acceptor centers in the silicon surface layer. Thermal anneal of hydrogenated acceptor begins at 50 °C for boron and 100 °C for Al, Ga, and In. The initial phase during thermal annealing of AEIed MOSCs follows a first order kinetics at higher annealing temperatures, reaching a steady-state acceptor density before the second phase begins. The long-time anneal follows strictly a second-order kinetics which is rate limited by the recombination of two hydrogen atoms to form a molecule. Incomplete anneal is observed at higher temperatures when the dissociation rate of the hydrogen molecule becomes comparable with the recombination rate of two hydrogen atoms. Analytical solutions are obtained which account for all the details of the observed hydrogenation and annealing curves. These solutions are used to evaluate the thermal capture and emission rates and electron-impact emission rates of hydrogen or proton at the group-III impurity centers and the bimolecular generation and recombination rates of hydrogen. A new concept of hydrogen or proton traps in analogy to the electronic hole or electron traps is introduced to analyze the kinetics and account for the observed chemical trends between thermal capture and emission rates, thermal activation energy and bond strength. Chemical trends are noted which are consistent with the trapped proton activation energy and hydrogen bond strength trend, B〈Al〈Ga〈In.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.335249
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  • 7
    Digitale Medien
    Digitale Medien
    Laser-induced emission of CH3O in solid argon (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 81-86 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The A 2A1−X 2E fluorescence of CH3O in solid Ar in the wavelength range 310–420 nm has been studied either by simultaneous laser photolysis and excitation of CH3ONO in the Ar matrix or by laser excitation of the products deposited from the reactions of microwave-discharged CF4 with CH3OH diluted by Ar. The spectrum showed an extensive progression in C–O stretching (ν3). The zero-phonon lines of 12CH3O and 13CH3O yielded unambiguous vibrational assignments with ν00=31 291, ω‘e=1051, and ω‘ex‘e=6.5 cm−1 for 12CH3O. Observation of several weak combination bands also yielded ν‘2=1356, ν‘4=2758, and ν‘5=1406 cm−1. The laser excitation spectra in the 273–322 nm region also exhibited an intense progression in C–O stretching with ω'e=657 and ω'ex'e=4.4 cm−1 for 12CH3O. Additional wave numbers ν'2=1308 and ν'5=1410 cm−1 were also obtained from the combination bands.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.456471
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  • 8
    Digitale Medien
    Digitale Medien
    Equivalence of higher-order Lagrangians. II. The Cartan form for particle Lagrangians (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 902-906 
    Details
    ISSN: 1089-7658
    Quelle: AIP Digital Archive
    Thema: Mathematik , Physik
    Notizen: It is shown how Cartan's method of equivalence may be used to obtain the Cartan form for an r th-order particle Lagrangian on the line by solving the standard equivalence problem under contact transformations on the jet bundle J r+k for k≥r−1.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.528358
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  • 9
    Digitale Medien
    Digitale Medien
    Low-temperature diamond growth in a microwave discharge (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2739-2741 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new regime for plasma-assisted chemical vapor deposition (CVD) of diamond is reported in which high quality diamond films can be deposited on silicon with relatively high ratios of methane in hydrogen mixtures and at significantly lower substrate temperatures than previously reported. The deposition was achieved in a microwave plasma discharge with a feed gas consisting of a mixture of only methane and hydrogen. The surface temperature of a molybdenum sample, when exposed to the same plasma environment, was measured at 500 °C with an infrared scanning camera. This substrate temperature is substantially lower than the 700–1000 °C range generally regarded as the optimal regime for CVD diamond growth. Analysis by Raman spectroscopy showed that films deposited with a 2% methane in hydrogen mixture produced a near graphite-free diamond film at our reported low-temperature regime, while deposition at 1000 °C resulted in films with a much higher graphitic content.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101939
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  • 10
    Digitale Medien
    Digitale Medien
    Effects of arsenic concentration on the formation of dislocation loops near the projected ion range in high-dose As+-implanted (001) Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2304-2306 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The formation of a two-layer structure and the inhibition of the formation of dislocation loops near the projected ion range (Rp ) have been observed by cross-sectional transmission electron microscopy in 80 keV, 1×1016 and 2×1016/cm2 As+-implanted (001) Si, respectively. The correlations among the arsenic concentration, electrical inactivation of impurity, suppression of the formation of interstitial loops near Rp, and retardation of the epitaxial regrowth rate provide significant insight into the point-defect migration and agglomeration during solid phase epitaxial regrowth of implantation amorphous silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.102045
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