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  • 1
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The improvement of potential confinement was attained in the GAMMA 10 tandem mirror [Phys. Rev. Lett. 55, 939 (1985); Proceedings of the 13th International Conference on Plasma Physics and Controlled Nuclear Fusion Research, Washington, 1990 (International Atomic Energy Agency, Vienna, 1991), Vol. 2, p. 539] by axisymmetrization of heating systems for the plasma production, heating, and potential formation. A significant increase of the density and diamagnetism by the potential confinement was observed. In the previous experiment, it was difficult to increase the central cell density higher than 2.7×1018 m−3. One of the possible mechanisms is the density clamping due to the eigenmode formation of the ion–cyclotron-range of frequency (ICRF) waves in the axial direction. With high harmonic ICRF waves (RF3), the experiments to overcome this problem have been performed. In preliminary experiments with RF3 and NBI the maximum density of 4×1018 m−3 was attained. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Molecular microbiology 2 (1988), S. 0 
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: The capsule of Bacillus anthracis is an important virulence factor consisting of poly-o-glutamic acid. The genetic region required for the encapsulation was cloned in Escherichia coli from the capsule plasmid pTE702, using a selection procedure based on an immunodlffusion assay. The cloned region directed synthesis of the capsule both In E. coli and B. anthracis. Capsule synthesis from these clones, as in the wild type, was dependent upon the presence of CO2. However, encapsulation directed by the cloned fragment was less marked than from pTE702. Another region enhancing capsulation was shown to exist on pTE702. The minimum size of the encapsulation region was defined to within 2.7 kb DNA and shown to be essential for the encapsulation in B. anthracis.
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  • 3
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: A large plasmid-encoded protein, VirG, on the bacterial surface is essential for the spreading of Shigella by eliciting polar deposition of filamentous actin In the cytoplasm of epithelial cells. VirG expression from the large plasmid is diminished greatly when it is introduced into Escherichia coli K-12 from Shigella. In an attempt to identify factors affecting VirG expression, we found that the absence of the ompT gene, encoding outer membrane protease OmpT, restored full production of VirG protein to E. coli K-12. Conversely, upon introduction of the ompT gene of E. coii K-12 into Shigella, spreading ability was completely abolished, probably because of the proteolytic degradation of VirG protein by OmpT. Analysis of the DNA sequence of the ompT region indicated that the absence of the ompT gene occurred in Shigella and enteroinvasive E. coli strains, and that the absent DNA segment corresponded to a remnant lambdoid phage structure found in E. coli K-12, which encompasses a 21 kb DNA segment spanning from argU through to the ompT genes. Since ompT is located near purE in E. coli K-12 and a virulence locus for provoking keratocon-junctivitis in the eyes of guinea-pigs, named kcpA is located near purE in S. fiexnerl, and the two loci are involved in VirG expression, the KcpA∼ mutants of S. flexneri 2a constructed were examined for correlation between acquisition of ompT and VirG degradation. Our data suggest that the previous recognition of a kcpA locus in S. flexneri is the result of transfer of the ompr gene from E. coli K-12, giving rise to a KcpA phenotype. These results indicate that the lack of OmpT protease confers upon Shigella the ability to spread into adjacent epithelial cells.
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  • 4
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Bacillus anthracis produces a gamma-linked poly-D-glutamic acid capsule that is essential for virulence. A 6.2 kb fragment of B. anthracis DNA (cap), when present in Escherichia coli, produces a capsular polymer that is immunologically identical to that produced by B. anthracis. By immunodiffusion analysis of E. coli strains carrying varying portions of the cap region, we identified a novel gene (dep) responsible for degradation of the capsular polymer of B. anthracis. The simultaneous presence of the cap region and the dep gene caused production of low-molecular-weight, degraded capsular polymer both in E. coli and in B. anthracis, whereas the cap region atone caused production of a high-molecular-weight capsule. The dep gene mapped immediately downstream of the cap region within a 1.8 kb fragment and was transcribed in the same direction. This fragment was sequenced and a 1401 bp open reading frame (ORF) was found that is predicted to encode a peptide with molecular weight of 51460. By in vitro transcription-translation analysis, this ORF was shown to be the dep gene product. The deduced amino acid sequence of the dep product has sequence similarity to E. coli and mammalian γ-glutamyltranspeptidase (GGT). However, the Dep protein did not have GGT activity. The Dep protein appears to be an enzyme that catalyses the hydrolysis of the poly-D-glutamic acid capsule. Although the biological functions of the dep gene are unknown, it is possible that low-molecular-weight, diffusible polyglutamates produced through the action of the dep gene may act to inhibit host defence mechanisms.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2608-2610 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured Raman spectra of diamond films prepared by a hot-filament method and found that diamond layers on Si substrates are under compressive strain. The degree of the strain is found to increase with increasing nondiamond component in the diamond films. It is shown that Raman spectroscopy is a powerful method to estimate the crystalline quality, especially the strain in the diamond films.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 282-287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide layers etched at an angle were fabricated on a 6H-SiC substrate by varying etching time in diluted hydrofluoric acid, and 6H-SiC metal–oxide–semiconductor structures with various oxide thicknesses were formed. High-frequency capacitance–voltage measurements were carried out for determining the change in gate voltages corresponding to the midgap condition as a function of the thickness of the oxide layer, and the depth profile of trapped charge density in the oxide was estimated from the result. It is found that negative charges build up near the 6H-SiC/SiO2 interface, and that positive charges accumulate in the region at 40 nm from the interface. No significant difference is observed in the depth profiles of the trapped charge density between the oxide layers on the carbon and silicon faces. The origin of these trapped charges is discussed in conjunction with the carbon-related compounds in the oxide layers. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1693-1696 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the cathodoluminescence spectra around the gate electrode in the cross section of a GaAs metal-semiconductor field-effect transistor with a detector and proposed a new technique to estimate the carrier concentration and stress in electronic devices, using cathodoluminescence spectroscopy. From a comparison between maps of the peak intensity and peak-energy shift, it is found that there is heavy carrier doping in the drain and source regions and that the carrier concentration is about 6×1017 atoms/cm3. The carrier concentration estimated from the peak-energy shift agrees well with that obtained from the capacitance–voltage method. Furthermore, it is found that there is hardly any carrier doping and that stresses are relaxed at a distance of about 2 μm from the gate electrode. Cathodoluminescence spectroscopy is a useful technique for estimating the two-dimensional distribution of the carrier concentration and stress in electronic devices within a short amount of time. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 941-944 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarized Raman spectra around trenches formed on (100) silicon wafers have been measured and it has been found that the peak frequency shift varies with the polarization configuration, suggesting that anisotropic stresses occur around the trenches. The different stress components have been calculated by the use of the polarization Raman technique and it was found that the stress distribution of each component approximately agrees with that of each component simulated by a finite element method. Polarized Raman spectroscopy is a powerful technique for the estimation of an anisotropic stress of an electronic silicon device in situ. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1309-1312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was 〈m1;38p〉found that interface traps are generated at the 3C-SiC/SiO2 interface and oxide-trapped charges are built up in the oxide by 60Co gamma-ray irradiation. The generation of the interface traps and the oxide-trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2890-2893 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamondlike carbon films were prepared by electron cyclotron resonance chemical vapor deposition. Structures of the carbon films were characterized by Raman spectroscopy and Fourier-transform infrared spectroscopy. The relationship between the properties of films and growth conditions has been examined. High-energy ion species extracted from a discharge of methane in the electron cyclotron resonance cavity, which is positively-biased electrically against the earthed substrate, have an important role in the growth behavior of hard diamondlike carbon films.
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