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  • Articles  (3)
  • American Institute of Physics (AIP)  (2)
  • American Society of Hematology  (1)
  • 1
    Publication Date: 2019-03-28
    Description: Thrombopoietin (Thpo)/myeloproliferative leukemia virus oncogene (Mpl) signaling controls hematopoietic stem cell (HSC) self-renewal and quiescence; however, how these 2 seemingly opposing functions are controlled is not well understood. By transplantation of lentiviral-transduced hematopoietic cells in the Mpl-deficient mouse model, we addressed whether known or predicted Thpo target genes were able to rescue the Mpl-deficient phenotype of the mice. Among the tested genes, we identified endothelial protein C receptor (Epcr) to expand HSCs with the long-term (LT)-HSC surface phenotype in Mpl−/− mice and to enable secondary transplantation of Mpl-deficient bone marrow (BM). Epcr-transduced Mpl−/− HSCs enter quiescence earlier after transplantation than control-transduced Mpl−/− cells, and upregulated expression of the anti-apoptotic gene Bcl-xL. Also, in the wild-type background, Epcr expression marked the engrafting population in the BM. Furthermore, Epcr expression in Mpl−/− hematopoiesis increased the number of megakaryocytes in the BM. In vitro Thpo supported the surface expression of Epcr on primary murine hematopoietic stem and progenitor cells. With these data, we add new insights into Thpo-dependent influence on HSC engraftment after transplantation. This may be of use for the in vitro manipulation of HSCs, also in the context of gene therapy.
    Print ISSN: 0006-4971
    Electronic ISSN: 1528-0020
    Topics: Biology , Medicine
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2167-2167 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The second generation SUSS XRS-200 stepper will be described. The development of this stepper was based on three years of experience with the first generation SUSS MAX-I steppers operated at the BESSY synchrotron ring in Berlin. These MAX-I steppers have been in use since 1984 in mask, resist, and source research and development. Circuits with sub-0.5-micron feature sizes were produced using the MAX-I. In contrast to the first generation stepper, the XRS-200 is designed for production volumes with fully automatic mask and wafer handling. With the production oriented XRS-200, gap setting is performed optically using a trinocular microscope. After coarse prealignment of each field, the maskholder and wafer chuck are clamped together. Fine alignment of mask to wafer is then performed, and the complete clamped unit is scanned through the horizontal stationary x-ray beam. Because the mask and wafer are scanned, the beamline end window need only be a few millimeters in height. With this design, a thinner end window can be used, thereby maximizing x-ray flux to the mask and wafer. The first of the XRS-200 series has been installed at BESSY. Initial alignment and exposure results will be presented.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2150-2152 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: With the SUSS XRS 200 a synchrotron compatible stepper is available which combines high positional accuracy and high throughput using the scanning exposure method. With 1 s each for exposure, alignment, and stepping time, 20 6-in. wafers/h can be processed with the smallest stepfield size of 26×26 mm. The excellent linewidth control, irrespective of topography and surface characteristics, with a large gap and exposure dose window, show the capability of x-ray lithography to be used as the next generation production lithography method. The SUSS XRS-200 provides the user with a tool to take full advantage of this wide process latitude and make production of sub-half-micron features an economical operation.
    Type of Medium: Electronic Resource
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