Publication Date:
2015-01-06
Description:
Author(s): H. Oike, F. Kagawa, N. Ogawa, A. Ueda, H. Mori, M. Kawasaki, and Y. Tokura The invention and development of memory devices are important tasks for facilitating continued innovation in the field of information technology. The authors achieve repeatable switching between a high-resistivity charge-crystalline (or charge-ordered) state and a low-resistivity quenched charge glass via both optical and electrical heating in an organic conductor, θ -(BEDT-TTF) 2 X . They observe switching that is one order of magnitude faster in another isostructural organic conductor that requires faster cooling (〉10 3 K/s) to kinetically avoid charge crystallization, indicating that the material’s critical cooling rate can be a useful guideline for pursuing a faster “correlated-electron phase-change memory (PCM)”. These results establish a clear case whereby practically stable glassy electronic states hidden behind long-range ordered states can be uncovered by adopting hitherto-untried quenching rates and thus underlies a new class of non-volatile PCM. [Phys. Rev. B 91, 041101] Published Mon Jan 05, 2015
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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