Publication Date:
2011-03-22
Description:
Author(s): A. Sharma, N. M. A. Janssen, S. G. J. Mathijssen, D. M. de Leeuw, M. Kemerink, and P. A. Bobbert We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a l... [Phys. Rev. B 83, 125310] Published Mon Mar 21, 2011
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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