Publication Date:
2015-05-29
Description:
Author(s): M. Beeler, C. B. Lim, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff, and E. Monroy GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensi... [Phys. Rev. B 91, 205440] Published Wed May 27, 2015
Keywords:
Surface physics, nanoscale physics, low-dimensional systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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