Publication Date:
2012-12-15
Description:
Author(s): L. E. Hintzsche, C. M. Fang, T. Watts, M. Marsman, G. Jordan, M. W. P. E. Lamers, A. W. Weeber, and G. Kresse We present ab initio density functional theory studies for stoichiometric as well as nonstoichiometric amorphous silicon nitride, varying the stoichiometry between Si 3 N 4.5 and Si 3 N 3 . Stoichiometric amorphous Si 3 N 4 possesses the same local structure as crystalline Si 3 N 4 , with Si being fourfold coordi... [Phys. Rev. B 86, 235204] Published Fri Dec 14, 2012
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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