Publication Date:
2016-12-16
Description:
Author(s): B. Shojaei, A. C. C. Drachmann, M. Pendharkar, D. J. Pennachio, M. P. Echlin, P. G. Callahan, S. Kraemer, T. M. Pollock, C. M. Marcus, and C. J. Palmstrøm The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with A l 1 − x G a x Sb barriers are reported. The electron-mobility-limiting scattering mechanisms were determi… [Phys. Rev. B 94, 245306] Published Wed Dec 14, 2016
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Permalink