Publication Date:
2014-03-18
Description:
Author(s): M. Teich, M. Wagner, D. Stehr, H. Schneider, M. Helm, C. N. Böttge, A. C. Klettke, S. Chatterjee, M. Kira, S. W. Koch, G. Khitrova, and H. M. Gibbs Weak near-infrared and strong terahertz excitation are applied to study excitonic Rabi splitting in (GaIn)As/GaAs quantum wells. Pronounced anticrossing behavior of the split peaks is observed for different terahertz intensities and detunings relative to the intra-excitonic heavy-hole 1s–2p transiti... [Phys. Rev. B 89, 115311] Published Mon Mar 17, 2014
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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