Publication Date:
2018-07-20
Description:
Author(s): W. Hahn, J.-M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y.-R. Wu, M. Piccardo, F. Maroun, L. Martinelli, Y. Lassailly, and J. Peretti We present direct experimental evidence of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a ne... [Phys. Rev. B 98, 045305] Published Thu Jul 19, 2018
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
Permalink