Publication Date:
2015-12-17
Description:
Author(s): K. Alberi, D. A. Beaton, and A. Mascarenhas Bismuth-derived resonant states with T 2 symmetry are detected in the valence band of GaA s 1 − x B i x using electromodulated reflectance. A doublet is located 42 meV below the valence-band edge of GaAs that is split by local strain around isolated Bi impurity atoms. A transition associated with a singlet … [Phys. Rev. B 92, 241201(R)] Published Mon Dec 14, 2015
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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