Publication Date:
2015-11-19
Description:
Hot-carrier-induced linear drain current (I dlin ) and threshold voltage (V th ) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V th increasing and the channel conductance (G ch ) decreasing, then reduces I dlin . In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G d ), and then increases I dlin . Consequently, the eventual I dlin degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I dlin anomalously increases while the V th is increasing with power law. The thin layer field pLDMOS exhibits more severe V th instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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