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  • 1
    Electronic Resource
    Electronic Resource
    Interface state generation after hole injection (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 328-336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After terminating electrical stresses, the generation of interface states can continue. Our previous work in this area indicates that the interface state generation following hole injection originates from a defect. These defects are inactive in a fresh device, but can be excited by hole injection and then converted into interface states under a positive gate bias after hole injection. There is little information available on these defects. This article investigates how they are formed and attempts to explain why they are sensitive to processing conditions. Roles played by hydrogen and trapped holes will be clarified. A detailed comparison between the interface state generation after hole injection in air and that in forming gas is carried out. Our results show that there are two independent processes for the generation: one is caused by H2 cracking and the other is not. The rate limiting process for the interface state generation after hole injection is discussed and the relation between the defects responsible for this generation and hole traps is explored. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377305
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen induced positive charge generation in gate oxides (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1911-1919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article investigates the H2-anneal induced positive charge generation in the gate oxide of metal-oxide-semiconductor field-effect transistors fabricated by a submicron complementary metal-oxide-semiconductor process. A significant number (∼1012 cm−2) of fixed and mobile positive charges are generated at 450 °C. Properties (reactivity, electrical and thermal stability) of these positive charges are compared with the positive charges observed in the buried oxide of silicon-on-insulator devices. The differences in these two are investigated, in terms of their transportation time across the oxide, uniformity and sources of hydrogen. Attention is paid to the role played by boron in the generation and the possible connection between the positive species observed here and the defects responsible for the positive bias temperature instability. Efforts are made to explain the difference in reactivity between the H2-anneal induced positive species and the hydrogenous species released by irradiation or electrical stresses. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384860
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  • 3
    Electronic Resource
    Electronic Resource
    Operation of an 8 m suspended Michelson interferometer (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2773-2776 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we report the successful locking and operation of an 8 m Michelson interferometer which uses multistage cantilever spring vibration isolators. The control system for normal mode damping is described. The performance and dominant noise sources of this interferometer are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149014
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  • 4
    Electronic Resource
    Electronic Resource
    Miscibility of amorphous ZrO2–Al2O3 binary alloy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2374-2376 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2–Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2–Al2O3 amorphous phase is suitable for high-k applications. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459765
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  • 5
    Electronic Resource
    Electronic Resource
    Silicon on insulator Mach–Zehnder waveguide interferometers operating at 1.3 μm (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2448-2449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mach–Zehnder (MZ) waveguide interferometers integrated on SOI (silicon on insulator) for 1.3 μm operation are studied on the basis of the large cross-section single-mode rib waveguide condition and the free-carrier plasma dispersion effect in Si wafer direct bonding SOI by back-polishing. And the MZ interferometers are fabricated by using KOH anisotropic etching. Their insertion losses and modulation depths are measured to be 4.81 dB and 98%, respectively, at the wavelength of 1.3 μm when a forward bias voltage applied to a p+n junction is 0.95 V and the active zone length of the MZ interferometers is 816.0 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114603
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of hydrogen surface pretreatment of silicon dioxide on the nucleation and surface roughness of polycrystalline silicon films prepared by rapid thermal chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 485-487 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well known that Si surface treatment is crucial for low-temperature Si epitaxy. Although considerable work exists which is aimed at elucidating the effects of Si surface pretreatments on Si epitaxy, little is known about the effects of SiO2 surface pretreatments for polycrystalline silicon (poly-Si) growth. We report on a study of SiO2 surface pretreatment effects on poly-Si nucleation and film surface roughness using a low energy hydrogen ion beam (200 eV) and H2 gas annealing (850 °C) in a rapid thermal chemical vapor deposition system. In situ real-time ellipsometry was used to monitor the surfaces during pretreatment and observe the nucleation. The microstructure and surface roughness of the deposited poly-Si films are determined by analysis of in situ spectroscopic ellipsometry (SE) and atomic force microscopy (AFM) measurements. Hydrogen ion beam pretreatment was found to produce higher nuclei density and a smoother poly-Si surface than nonpretreated substrates, and the opposite was found for hydrogen gas annealing giving lower nuclei density and rougher poly-Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118148
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  • 7
    Electronic Resource
    Electronic Resource
    In situ real time measurement of the incubation time for silicon nucleation on silicon dioxide in a rapid thermal process (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 700-702 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Real time ellipsometry and atomic force microscopy (AFM) were used to measure critical nucleation parameters for polycrystalline silicon deposition on an amorphous SiO2 layer by rapid thermal chemical vapor deposition (RTCVD) using disilane (5% in helium). A particularly important parameter for selective epitaxial deposition is the time for nuclei to form, the incubation time. Quantitation of the nucleation parameters, such as the nuclei density, nuclei growth rate, nuclei coalescence, and an operational incubation time were determined from the real time ellipsometric measurements and confirmed by AFM. For a substrate temperature of 700 °C and at a chamber pressure of 0.2 Torr, the nuclei densities of 1.4×1010 nuclei/cm2, incubation time of 26 s and nuclei layer growth rates of 20 nm/min were obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114104
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: "Silicon on insulator Mach–Zehnder waveguide interferometers operating at 1.3 μm'' [Appl. Phys. Lett. 67, 2448 (1995)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1735-1735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116787
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  • 9
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    Communication: Non-monotonic evolution of dynamical heterogeneity in unfreezing process of metallic glasses (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-07-30
    Description: The relaxation dynamics in unfreezing process of metallic glasses is investigated by the activation-relaxation technique. A non-monotonic dynamical microstructural heterogeneities evolution with temperature is discovered, which confirms and supplies more features to flow units concept of glasses. A flow unit perspective is proposed to microscopically describe this non-monotonic evolution of the dynamical heterogeneities as well as its relationship with the deformation mode development of metallic glasses.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
    Published by American Institute of Physics (AIP)
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  • 10
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    Modulation of unidirectional anisotropy for Co-based amorphous ribbons by longitudinal pulse field (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-01-31
    Description: Field-induced unidirectional anisotropy of Co-based amorphous ribbons was discussed by magnetization measurement. The shifted hysteresis loops of Co 58 Fe 5 Ni 10 Si 11 B 16 amorphous ribbons were obtained by annealing the samples in longitudinal magnetic field. Here, the feasibility of employing the longitudinal pulse field to tailor the anisotropy characteristic is demonstrated. It is found that the shifted loops can be technically controlled by enhancing the pulse field to modulate the magnetic anisotropy from unidirectional to uniaxial, and even back to unidirectional. The surface domains scan gives strong evidence that the pulse field can be one of the skillful methods to navigate the unidirectional anisotropy in the amorphous ribbons for potential applications.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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