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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 3160-3167 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Mutual diffusion in poly(ethylene oxide)/polymethyl methacrylate blends is investigated by using the photon correlation spectroscopic technique. The mutual diffusion coefficient and the static structural factor are measured as a function of concentration for various temperatures. The Onsager coefficient is obtained by simultaneous measurements of the diffusion coefficient and static structural factor. The result is employed to test theoretical predictions on the concentration dependence of the mutual diffusion coefficient of the polymer blend. The experiment results are found not in agreement with theoretical predictions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 6538-6546 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An accurate chemisorption geometry was determined for the c(2x2)S/Fe(001) system using the angle-resolved photoemission extended fine structure (ARPEFS) method, with S(1s) photoelectron peak intensities observed along [001] and [011]. Multiple-scattering spherical-wave analysis confirmed the LEED-derived fourfold hollow site geometry, and yielded perpendicular distances for S of 1.09(2) A(ring) above the first layer and 2.50(2) A(ring) above the second layer atom directly below S. The S–Fe nearest-neighbor bond length is 2.30(1) A(ring) and the M–S–M bond angle is 123(1)°. The Fe1 –Fe2 interlayer distance is contracted to 1.40(2) A(ring) and the Fe2 –Fe3 distance expanded to 1.46(3) A(ring), relative to the bulk value of 1.43 A(ring). The results are compared with similar systems and partially explained on chemical grounds. The derived structure agrees with the results of a self-consistent field (SCF) Xα spherical wave (SW) calculation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 1157-1164 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Gas phase ion–molecule reactions of large protonated water clusters with methanol are studied in a flow reactor under thermal conditions. A distinct feature at H+(H2O)21 corresponding to a stable clathrate structure is observed. Upon the addition of methanol from a reactant gas inlet, products of the general form H+(H2O)n(CH3OH)m (m=1–5) are detected. Distinct features at n+m=21 are observed under different experimental conditions, which are indicative of the formation of clathrate-like structures for mixed water–methanol cluster ions. A switching reaction mechanism rather than an association is found to be operative. Considering the results of the present study and those from previous molecular beam experiments suggests that clathrate structures arise from their inherent stabilities rather than due to kinetic effects.
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 1503-1510 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Conductivity (dc) measurements over the temperature range 273≤T≤360 K of aqueous solutions of NaCl at various concentrations were made and used to establish transport properties of ions in solution. The dynamical properties of the electrolytes were used to establish the nature of the hydrogen bonding in these aqueous systems. Rate equations for ion formation and recombination were used to establish the temperature ranges in which hydrogen bonding dominated in forming polymeric species. Experimental data obtained on the aqueous systems demonstrate that over the range of temperatures 273≤T≤323 K the water system maintains a structure which appears to be independent of solute concentration. This is evidenced by the nearly constant slope in the Arrhenius plot of the data over that range. For the higher range of temperatures, 323≤T≤360 K, the slope of the Arrhenius plot varied more than one order of magnitude for the concentration levels studied. An average value of hydrogen bond energy of 2.8 kcal mol−1 was obtained from the Arrhenius plots for 273≤T≤323 K for samples of pure water. This value was taken for pure water as the slopes remained nearly constant in this range of temperatures for all aqueous solutions but varied systematically with ion concentration over the range of temperature 323≤T≤360 K. If the total range of temperature is chosen, the average value for EHB was found to be 2.5 kcal mol−1.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 2393-2400 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is supposed that local and transient reconnection in the plasma boundary layer can be caused by the impact and switch-off of a single directional transverse shear flow. MHD (magnetohydrodynamic) simulation is used to investigate the reconnection processes in the two cases. It is found that if the inflow is homogeneous, it does not cause reconnection; if the inflow is shearing flow, no matter how great the shear of the flow is, it may cause reconnection either during impacting period or after stop impacting. It is pointed out that the sudden stop of external force may be an important triggering mechanism of energy transformation and reconnection in the plasma boundary layer region. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 504-505 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple low-voltage (20-kV) UHV-compatible Mott polarimeter is described that incorporates an in-line retarding potential energy analyzer that, at incident electron energies ≤50 eV, provides an energy resolution of ≤0.5 eV. The polarimeter is very compact and is suitable for use in a wide variety of applications requiring energy- and angle-resolved polarization measurements.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1706-1708 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A UHV compatible Mott polarization analyzer is described that employs electron accelerating voltages of ∼20 kV. The efficiency of the analyzer, ∼3×10−5, is competitive with those provided by other polarimeters. The present analyzer is considerably simpler and more compact than earlier designs and can be used to undertake energy- and angle-resolved polarization measurements with input beam currents below ∼10−14 A.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2033-2035 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Melt-spun ribbons of tetragonal Pr2Fe14B exhibit favorable hard magnet characteristics. Technically relevant materials based on this compound, however, generally contain a certain amount of soft magnetic α-Fe or Fe3−xBx for remanence enhancement through exchange coupling. The nominal off-stoichiometric compositions lead to metallurgical complications, which are not easily resolvable by standard phase identification techniques such as x-ray diffraction and thermal magnetic analysis. As a viable alternative, 57Fe-Mössbauer spectroscopy can be used to delineate individual Fe sites. To provide a basis for such an approach, this report gives Mössbauer parameters including hyperfine magnetic field, isomer shift, and quadrupole splitting as obtained from a single-phase melt-spun Pr2Fe14B ribbon. © 2001 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3061-3063 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial NiO hillocks on the {111} and {001} facets of truncated octahedral nanoparticles of Ni have been directly observed by high-resolution transmission electron microscopy. These nanometer hillocks form a rough shell enclosing the Ni nanoparticle. The epitaxial relationships of NiO on nanoparticles of Ni are the same as those of NiO on bulk Ni {111} and {001} surfaces. The formation of hillocks is related to the relaxation of the compressive stress in NiO arising from the very large lattice mismatch between NiO and Ni. The compressively stressed epitaxial NiO shell provides effective protection to the nanoparticles of Ni against further oxidation. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1011-1013 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have generated electromagnetic beams from a variety of semiconductors. When a bare semiconductor wafer was illuminated by femtosecond optical pulses, electromagnetic waves radiate from the surface and form collinear diffraction-limited electromagnetic beams in the inward and outward directions. The amplitude and phase of the radiated field depend on carrier mobility, the strength and polarity of the static internal field at the semiconductor surface.
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