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  • 1
    Electronic Resource
    Electronic Resource
    Effect of p/i interface layer on dark J-V characteristics and Voc in p-i-n a-Si solar cells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3494-3499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dark current-voltage (J-V) characteristics of p-i-n a-Si solar cells are studied to clarify the effect of the p/i interface layer on the open-circuit voltage (Voc). It is shown that the recombination current in the p/i interface region is predominant in the a-Si solar cells with an i-layer thickness of less than 200 nm and has a great effect on the dark-current transport in the solar cells. It is also shown that the current transport of the cells with the p/i interface layer of constant band gap of a thickness of more than 14 nm is effectively the same as that of a cell in which the band gap of the whole i layer is equal to that of the interface layer. A model in which the dark current of the cell consists of the recombination current at the p/i interface and the recombination current in the bulk region of the i layer is proposed. Using this model, the Voc degradation for the a-Si solar cells with the p/i interface layer is shown to be due to the defects generated in the i layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345340
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  • 2
    Electronic Resource
    Electronic Resource
    Luminescence and relaxation processes in Er3+-doped glass fibers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 938-941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence and related characteristics have been investigated for Er3+-doped silica glass fibers and for fibers and bulk material of calcium metaphosphate glass. Special interest has been directed toward elucidating relaxation processes leading to 1.5-μm light emission. Several emissions from higher excited states were investigated and excited-state lifetimes were also measured. Approximate radiative and nonradiative transition probabilities have been obtained for the excited levels. These results have confirmed that dominant transitions populating the lowest excited level are step-by-step nonradiative relaxations and that only a limited amount of energy is supplied via intermediate radiative transitions. It has also been shown that the 1.5-μm emission decay time constant elongates with increasing fiber length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351317
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  • 3
    Electronic Resource
    Electronic Resource
    Foucault imaging of superconducting fluxons (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4096-4103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Foucault method, one of the classical Lorentz microscopy techniques, is here investigated in order to demonstrate its applicability to in-focus observations of superconducting fluxons. As the deflections involved are of the order of 10−5−10−6 rad, low-angle techniques, high brightness, coherent illumination, and a low aberration magnetic stage are needed. The first experimental results are presented and discussed in relation with a theoretical model for the fluxon which allows the interpretation of the main features of the observed patterns. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370317
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  • 4
    Electronic Resource
    Electronic Resource
    Small angle electron diffraction and Foucault mode Lorentz microscopy of superconducting vortex lattice (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1228-1230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small angle electron diffraction patterns from vortex lattices in Nb thin films were observed using a field emission transmission electron microscope. It was possible to obtain diffraction patterns in magnetic fields of up to 1000 G, from selected areas of (1–10) μm in diameter, and in (1–30) s. The degree of order of the vortex lattice was determined from the fine structure of the diffraction pattern. We also demonstrated Foucault mode Lorentz microscopy by using a diffraction technique. Vortices appeared by diffraction contrast in a focused micrograph, and therefore both vortices and material defects were simultaneously observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369347
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  • 5
    Electronic Resource
    Electronic Resource
    Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8311-8315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This research is an attempt to apply thermal plasma chemical vapor deposition for the ultrafast deposition of Si films for solar cells. The improvement of stability, controllability, and cleanliness of the process enabled the deposition of μc-Si films at the ultrafast rate of over 1000 nm/s. Moreover, a minimum defect density of 7.2×1016 cm−3 was achieved. Monte-Carlo simulation and step coverage analysis suggested that the precursor is an approximately 1 nm cluster with a sticking probability of about 0.6. The success of this research may change the established concepts of Si deposition technology. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370365
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  • 6
    Electronic Resource
    Electronic Resource
    Numerical investigation of thermophoretic effects on cluster transport during thermal plasma deposition process (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1814-1818 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cluster transport and deposition processes under the effects of thermophoresis are numerically investigated in terms of thermal plasma deposition processes. The cluster transport equation is solved within a prescribed flow field, where it is assumed that clusters with a given uniform size are generated within the boundary layer. Cluster concentration and deposition flux are calculated for clusters in the size range of 1–6 nm. Results are also given for comparative cases without thermophoresis effects. It is found that the thickness of the concentration boundary layer is significantly suppressed by the thermophoretical force. The effect of thermophoresis plays a more dominant role than that of diffusion, thus an almost uniform deposition efficiency is achieved for clusters of different sizes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433182
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  • 7
    Electronic Resource
    Electronic Resource
    Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 874-877 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A promising approach to obtain epitaxial films of oxide semiconductors was demonstrated, namely helicon-wave-excited-plasma sputtering epitaxy. Due to the surface-damage-free nature, completely a-axis-locked c(0001)-orientation ZnO epilayers were successfully grown on sapphire (0001) substrates having ultrasmooth surfaces with atomic steps. The ZnO epilayer exhibited a dominant near-band-edge photoluminescence (PL) peak at 300 K. Since the PL was considered to be due to the recombination of excitons bound to an impurity or a defect and certain tilting and twisting of the films were observed when Ar/O2 were used as sputtering gases, purification and optimization of the overall process are necessary to obtain improved epilayer qualities. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426238
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  • 8
    Electronic Resource
    Electronic Resource
    Fine crystal lattice fringes observed using a transmission electron microscope with 1 MeV coherent electron waves (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1342-1344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transmission electron microscope with a 1 MeV cold field-emission electron source has been developed for coherent and penetrating electron waves. We confirmed the coherence and overall stability of the microscope by observing Au(337¯) lattice fringes. These fringes have a 0.498 Å spacing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126028
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  • 9
    Electronic Resource
    Electronic Resource
    Ultraclean etching of GaAs by HCl gas and in situ overgrowth of (Al)GaAs by molecular beam epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 567-576 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching of GaAs by HCl gas has been systematically studied with emphasis on the quality of the heterointerfaces formed by the direct overgrowth of AlGaAs on the etched GaAs surfaces in an ultrahigh vacuum processing system. The interfaces were characterized by the transport properties of the two-dimensional electron gas (2DEG) and the photoluminescence from the quantum wells, both of which were formed at the interfaces. We show that the interfaces prepared by the etching and overgrowth at the molecular beam epitaxy-grown clean GaAs surfaces can be quite clean and almost damage-free so that high mobility 2DEG can be formed. We also report the properties of the interfaces prepared by the etching and overgrowth at the air-exposed GaAs surfaces, to show that the impurities adsorbed during the air exposure are efficiently removed and 2DEG can be formed at the interfaces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366651
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  • 10
    Electronic Resource
    Electronic Resource
    Electron beam-enhanced etching of InAs in Cl2 gas and novel in situ patterning of GaAs with an InAs mask layer (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1789-1791 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a novel in situ patterning process of GaAs and GaAs/AlGaAs heterostructures in which a thin InAs layer is used as an electron-beam resist layer for Cl2 gas etching in ultrahigh vacuum environment. It has been found that the etch rate of InAs by Cl2 gas is far lower (by a factor of 500) than that of GaAs but this etch rate can be enhanced by electron beam irradiation by a factor of 20, allowing the pattern formation in the InAs mask layer. By delineating a stripe pattern in the InAs resist and subsequently etching in situ the GaAs underneath, we have successfully formed a fine V groove. Since this process is clean and damage free, it is suited for the fabrication of quantum structures in which high-quality etch/regrowth interfaces are required.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110663
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