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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1617-1623 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photofragment translational spectroscopy of CBrClF2 at 157.6 nm was carried out using a crossed laser-molecular beams technique. Detected species are Br, Cl, and CF2. From the analyses of time-of-flight (TOF) spectra for these three species, the molecules were found to dissociate competitively through CBrF2+Cl, CClF2+Br, and CF2+Br+Cl channels with the branching ratio of 1.0:1.6−0.22+0.13:0.87−0.18+0.13. All of the CClF2 and CBrF2 radicals were found to dissociate spontaneously to produce Cl or Br+CF2, respectively. The angular distributions of these secondary products were found to be anisotropic. These fast secondary reactions are discussed on the basis of the calculated dissociation rates and rotational frequencies. © 2001 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 1624-1630 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Photodissociation dynamics from the repulsive nσC−X* (X=Cl,Br) states of CBrClF2 has been studied by propagating wave packets on the two diabatic potential energy surfaces obtained by an approximate diabatization of ab initio complete active space self-consistent field (CASSCF) potential energy surfaces. The diabatization was carried out so as to eliminate the transition-dipole moment between the two excited states. The results have confirmed the occurrence of simultaneous triple dissociation CBrClF2→Br+Cl+CF2 observed in the 157.6 nm photolysis of CBrClF2. The triple dissociation has been found to occur on both the upper and lower adiabatic surfaces with oscillation in the population in between. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2141-2143 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent image storage has been successfully performed in organopolysilane-based xerographic photoreceptors by ultraviolet image exposure, which converts organopolysilane into intrinsically insulating material with no charge carrier transporting ability due to photodecomposition. The stored image can be read out repeatedly as a negative toner image by the usual xerographic process with uniform visible light illumination, suggesting an application of the present photoreceptor to the xerographic printing master.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 10602-10608 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Dynamics and mechanisms of infrared multiphoton dissociation of CBrF2CHClF, CBrF2CHBrF, and CBrClFCBrF2 have been studied using a photofragmentation translational spectroscopy. All molecules dissociated through C–Br bond rupture reactions. At high laser fluence, the halogenated ethyl radicals produced by the primary dissociation reactions dissociated through carbon–halogen bond ruptures. Center-of-mass product translational energy distributions for the C–Br and C–Cl bond ruptures of all halogenated ethanes and ethyl radicals studied are essentially consistent with those calculated by Rice–Ramsperger–Kassel–Marcus (RRKM) theory. This indicates that there exists essentially no exit channel barrier on the potential energy surface for the C–Br or C–Cl bond rupture of the halogenated ethanes and ethyl radicals. © 1994 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 6487-6491 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Mechanism and dynamics of the infrared multiphoton dissociation of 2-chloro-1, 1,1,2-tetrafluoroethane have been studied using a photofragmentation translational spectroscopy. The molecule dissociates competitively through three-centered elimination of HCl and C–Cl bond rupture. The HCl elimination reaction accounts for 74% of the total primary dissociation yields. The center-of-mass translational energy distribution for the HCl elimination indicates that an exit barrier of several kcal/mol exists along the reaction coordinate on the potential energy surface. The infrared multiphoton dissociation of CF3CF produced by the HCl elimination from CF3CHClF also occurs as a secondary process through its dissociation into two CF2 molecules. The average excitation energy of dissociating CF3CHClF has been determined to be about 20 kcal/mol above the C–Cl dissociation threshold of the molecule by comparing the observed center-of-mass translational energy distribution for the C–Cl bond rupture reaction with that calculated by Rice–Ramsperger–Kassel–Marcus (RRKM) theory.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2974-2979 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier transport in poly(phenylmethylsilane) films doped with trap-forming organic compounds with different ionization potentials has been investigated. The carrier transport in the doped systems is discussed as trapping events in the transport-active host polymer. Zero-field activation energy E0 corresponds well to the ionization potential difference between the additives and host polymer. The field and temperature dependencies of the mobilities have been analyzed in the framework of Gill's [W. D. Gill, J. Appl. Phys. 43, 5033 (1972)] expression. Its characteristic parameter T0, at which the field dependence disappears, has been found to depend on trap depth and concentration, and an explicit expression interrelating them has been experimentally derived.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon (Si) thin films with very-low defect density for solar cells were fabricated by using high-speed (0.7–4.5 mm/s) zone-melting crystallization (ZMC) of amorphous-silicon (a-Si) thin films, resulting in films that had defects below the detection limit of electron spin resonance (ESR). In this letter, poly-crystalline silicon (poly-Si) films for zone-melting recrystallization (ZMR) and a-Si films for ZMC were each sandwiched between two SiO2 films. The Si films were 0.3–2.0 μm thick, the top SiO2 films were 0.35–1.5 μm thick, and the bottom SiO2 films were 0.18–1.2 μm thick. The a-Si ZMC films had higher crystal quality than did the poly-Si ZMR films. Over 90% of the grains in the a-Si ZMC films had preferred (100) orientation when the films were formed at scan speeds 0.7–4.5 mm/s. Transmission electron microscopy (TEM) revealed that neither distinct grain boundaries nor defects were visible in the a-Si ZMC films within the 9-μm-diam observation field. The a-Si ZMC films fabricated from the a-Si films with the thickness smaller than 1 μm had no voids. Such a low defect density indicates that silicon thin-film solar cells with high efficiency can be fabricated by using such very-low defect density silicon thin films. © 2001 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 7902-7909 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The unimolecular dissociation of trichloroethylene in its electronic ground state has been investigated using an infrared multiphoton dissociation combined with photofragmentation translational spectroscopy to measure product translational energies. The main reaction channel was found to be HCl elimination on the basis of observed product time-of-flight (TOF) spectra. A center-of-mass translational energy distribution for this channel provides direct evidence for competition between two channels, three- and four-centered HCl eliminations. Cl elimination was found to be a minor but significant channel from observed Cl+ and C2HCl+TOF spectra. The branching ratios were determined as 0.28, 0.55, and 0.17 for the three- and four-centered HCl eliminations and the Cl elimination, respectively. The three-centered channel exhibits a "statistical'' translational energy distribution which is typical for a reaction with no potential energy barrier in the reverse reaction, that is to say, no exit barrier reaction. In contrast, the four-centered channel exhibits a "nonstatistical'' translational energy distribution having a peak at around 2 kcal/mol in energy, indicating that a significant exit barrier exists in the channel. The fraction of potential energy converted to translational energy was estimated to be around 10%. Ab initio calculations at the QCISD(T)/6-311+G**//MP2(FC)/6-31G* level were employed to confirm the reaction mechanism. The agreement in the energetics is quite good. © 1995 American Institute of Physics.
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  • 9
    Publication Date: 2015-02-20
    Description: We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al 2 O 3 and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET exhibits the peak effective mobility of ∼76 cm 2 /V s. We have found that the effective hole mobility of the thin-body GaSb-OI p-MOSFETs decreases with a decrease in the GaSb-OI thickness or with an increase in Al 2 O 3 ALD temperature. The InAs passivation of GaSb-OI MOS interfaces can enhance the peak effective mobility up to 159 cm 2 /V s for GaSb-OI p-MOSFETs with the 20-nm-thick GaSb layer.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 10
    Publication Date: 2014-12-10
    Description: We demonstrate the operation of GaSb p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on (111)A surfaces with Al 2 O 3 gate dielectrics formed by atomic-layer deposition at 150 °C. The p-MOSFETs on (111)A surfaces exhibit higher drain current and lower subthreshold swing than those on (100) surfaces. We find that the interface-state density ( D it ) values at the Al 2 O 3 /GaSb MOS interfaces on the (111)A surfaces are lower than those on the (100) surfaces, which can lead to performance enhancement of the GaSb p-MOSFETs on (111)A surfaces. The mobility of the GaSb p-MOSFETs on (111)A surfaces is 80% higher than that on (100) surfaces.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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