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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6321-6323 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Ti0.48Zr0.52)O3 films produced by pulsed laser ablation deposition have been locally examined for their homogeneity and thickness through a comparative use of Raman and infrared spectroscopy. Raman scattering intensity appears to be an oscillating function of the position of the point under measurements. The observed oscillations were explained by light interference effects in the film and used to obtain the thickness profile and the refractive index dispersion of the film. The intensity distribution in Raman spectra across the film differs from that of the target. This difference is larger at the center than near the edge of the film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1830-1832 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured an enhancement factor of Raman signal up to 30 times using a Fabry-Pérot structure made of porous silicon (PS) layers of different porosity. The obtained enhancement was due to the coupling of the laser radiation and Stokes photons of porous silicon with the microcavity mode at the optimal laser beam incidence and scattering angles. Our results provide a way to increase the sensitivity of Raman spectroscopy for studying the species inside porous silicon which can considerably influence the properties of this material and hence of PS based devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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