ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dependence of the critical current density in chemical-vapor-deposited Nb3Ge tapes on tensile strain was investigated in magnetic fields up to 14 T perpendicular to the tape plane. The pinning force density Fp was found to be well represented by the strain scaling relation, Fp=c[Hc2(ε)]0.93h0.46(1−h)2.4, where Hc2(ε) is the upper critical field dependent on the applied strain ε and h is the reduced magnetic field H/Hc2(ε). For the Nb3Ge tapes studied, Hc2(ε) was found to be expressed by the form Hc2(ε)=Hc2(εm)[1−1550||ε0||1.92], where εm is the applied strain corresponding to zero intrinsic strain and ε0 is an intrinsic strain expressed by ε−εm. From the strain scaling relation, the values of the maximum upper critical field corresponding to the zero intrinsic strain, Hc2(εm), were calculated as 27.2 T for the Nb3Ge tape with 10.6-μm-thick Nb3Ge layers and a critical temperature Tc (midpoint) of 19.6 K, and 24.8 T for the Nb3Ge tape with 1.3-μm-thick Nb3Ge layers and Tc of 18.3 K. For these same tapes, the critical fields at the zero applied strain, Hc2(0), were 25.7 and 22.8 T, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356275
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