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  • American Institute of Physics (AIP)  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Surface reactivity of Si nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6396-6399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical reactivity of hydrogen-passivated surface of silicon nanowires (SiNWs) towards the reductive deposition of silver and copper ions from solution is reported. SiNWs synthesized by laser ablation were used in the investigation. The surface properties of SiNWs after the removal of the surface oxide were studied. It is found that the surface silicon of the SiNWs can readily reduce silver (I) and copper (II) ions to metal aggregates of various morphologies on the SiNW surface at room temperature. The reaction products have been characterized with scanning electron microscopy, energy dispersive x-ray spectroscopy, high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy. By varying the concentration of Ag(I) ions in the solution, nanostructures of silver with different shapes and sizes can be obtained. This approach for synthesis of metal nanostructures offers a potential method for the preparation of desired metal catalysts. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367402
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  • 2
    Electronic Resource
    Electronic Resource
    Straight β-SiC nanorods synthesized by using C–Si–SiO2 (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 294-296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Straight beta-silicon carbide nanorods have been grown on silicon wafers using hot filament chemical vapor deposition with iron particles as catalyst. A plate made of a C–Si–SiO2 powder mixture was used as carbon and silicon sources. Hydrogen, which was the only gas fed into the deposition system, acts both as a reactant and as a mass transporting medium. The diameter of the β-SiC nanorod ranged from 20 to 70 nm, while its length was approximately 1 μm. A growth mechanism of beta-silicon carbide nanorods was proposed. The field emission properties of the beta-silicon carbide nanorods grown on the silicon substrate are also reported. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125636
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  • 3
    Electronic Resource
    Electronic Resource
    β-SiC nanorods synthesized by hot filament chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3942-3944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A one-step procedure has been developed to grow β-SiC nanorods from a solid carbon and silicon source on a Si substrate by hot filament chemical vapor deposition. This process is catalyzed by metallic particles which come from impurities in the solid source which is a plate made by pressing a mixture graphite and silicon powders at 150 °C. Hydrogen was introduced into the reaction chamber to react with the solid plate to produce hydrocarbon and hydrosilicon radicals which presumably reacted to form SiC nanorods. The nanorods consisted of a crystalline β-SiC core with an amorphous silicon oxide shell layer and grew along the [100] direction. The nanorods were 10–30 nm in diameter and less than 1 μm in length. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124231
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