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  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2155-2157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning spreading resistance microscopy (SSRM) is an analytical technique originally developed for measuring two-dimensional carrier distribution in Si device structures with high spatial resolution. It is in essence an atomic force microscope equipped with a conducting tip that is biased relative to the sample. The spreading resistance value derived from the measured electrical current is a function of the local carrier concentration at the surface region surrounding the probe's tip. In this letter, we report the successful application of SSRM to the analysis of InP semiconductor device structures. We imaged a multilayer epitest structure, and a cross section of a three-dimensional structure in which we observed lateral Zn-dopant diffusion. Comparison of the SSRM profiles with one-dimensional secondary ion mass spectrometry depth profiles shows good qualitative agreement. SSRM analysis of InP-based device structures was found to be much simpler than that of Si structures: there is no need for surface preparation of the cleaved surface, a lower tip force is required, and metal tips, rather than doped diamond can be used. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122408
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Improvement of the temperature distribution on the surface of Si monochromator heated by synchrotron radiation : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 958-959 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: From the preliminary finite difference calculations it follows that by making the suitable notches (grooves) to the surface of the crystal monochromator heated by synchrotron radiation, it is possible to reduce the temperature variation across the surface of the crystal. The role of the notches is to reduce that component of the heat flow which is parallel with the surface of the crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143848
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of a point-contact on silicon using force microscopy-supported resistance measurements (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1530-1532 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A conductive atomic force microscope (AFM) tip based on B-implanted diamond has been developed for the determination of the spatial distribution of charge carriers in semiconducting structures. The characteristics of this tip have been determined by studying the current–voltage behavior as a function of substrate resistivity and tip load. From this work a model of the electrical properties of the microcontact is emerging. It includes an Ohmic contribution to the overall resistance, which is related to the plastically deformed area, and contributions from a barrier. The tip imprints have been imaged with AFM and their physical dimensions are seen to match the requirements of the model. From resistance measurements on uniformly doped silicon a calibration curve has been established which can be used as a standard to convert measured resistance into resistivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113636
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  • 4
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    Nanoscale three-dimensional reconstruction of electric and magnetic stray fields around nanowires (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-10-31
    Description: Static electromagnetic stray fields around nanowires (NWs) are characteristic for a number of important physical effects such as field emission or magnetic force microscopy. Consequently, an accurate characterization of these fields is of high interest and electron holographic tomography (EHT) is unique in providing tomographic 3D reconstructions at nm spatial resolution. However, several limitations of the experimental setup and the specimen itself are influencing EHT. Here, we show how a deliberate restriction of the tomographic reconstruction to the exterior of the NWs can be used to mitigate these limitations facilitating a quantitative 3D tomographic reconstruction of static electromagnetic stray fields at the nanoscale. As an example, we reconstruct the electrostatic stray field around a GaAs-AlGaAs core shell NW and the magnetic stray field around a Co 2 FeGa Heusler compound NW.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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