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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5116-5118 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of surface roughness in Co/Cu systems was investigated through the use of in situ scanning tunneling microscopy. Multilayers and single layers of cobalt and copper were sequentially grown on a Cu(100) substrate. We show that the growth mode of cobalt on copper is quite different from that of copper on cobalt. We characterize these differences by looking at the lateral variations and obtaining a mean measure of island length. The cobalt tends to nucleate in small (〈5 nm) islands. An overlayer of copper broadens this length scale while maintaining approximately the same peak-to-peak roughness of 5 monolayers. These growth mechanisms are shown to affect the way in which roughness propagates through multilayers. The impact of deposition temperature is also examined and seen to alter the degree of roughness in these samples. We conclude by discussing the implications for the magnetoresistance of these structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2750-2752 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of bilayers of the form Cu(100)/[Co(21 A(ring))/Cu(21 A(ring))]n were grown by both ion beam and DC magnetron sputtering techniques. Scanning tunneling microscopy images of the developing layers demonstrate a marked difference in the way in which roughness evolves through the films. The higher energy ion beam sputtered systems show a nonconformal roughness that is characterized by comparatively large lateral length scales. The less energetic magnetron-formed systems exhibit an island-upon-island growth that is conformal from layer to layer. Kerr effect measurements show that the former is ferromagnetically coupled and the latter is antiferromagnetically coupled. An explanation is presented that attributes the differences in roughness to the potential barriers at step edges. Adatom mobility and incident energy are shown to be the determining factors for this kind of conformal growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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