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  • 1
    Publication Date: 2015-12-29
    Description: The Hirota equation and the Sasa-Satsuma equation are U (1)-invariant integrable generalizations of the modified Korteweg-de Vries equation. These two generalizations admit oscillatory solitons, which describe harmonically modulated complex solitary waves parameterized by their speed, modulation frequency, and phase. Depending on the modulation frequency, the speeds of oscillatory waves (1-solitons) can be positive, negative, or zero, in contrast to the strictly positive speed of ordinary solitons. When the speed is zero, an oscillatory wave is a time-periodic standing wave. Oscillatory 2-solitons with non-zero wave speeds are shown to describe overtake collisions of a fast wave and a slow wave moving in the same direction, or head-on collisions of two waves moving in opposite directions. When one wave speed is zero, oscillatory 2-solitons are shown to describe collisions in which a moving wave overtakes a standing wave. An asymptotic analysis using moving coordinates is carried out to show that, in all collisions, the speeds and modulation frequencies of the individual waves are preserved, while the phases and positions undergo a shift such that the center of momentum of the two waves moves at a constant speed. The primary constants of motion as well as some other features of the nonlinear interaction of the colliding waves are discussed.
    Print ISSN: 0022-2488
    Electronic ISSN: 1089-7658
    Topics: Mathematics , Physics
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  • 2
    Publication Date: 2015-10-28
    Description: Harmonically modulated complex solitary waves which are a generalized type of envelope soliton (herein called oscillatory solitons ) are studied for the two U (1)-invariant integrable generalizations of the modified Korteweg-de Vries equation, given by the Hirota equation and the Sasa-Satsuma equation. A bilinear formulation of these two equations is used to derive the oscillatory 1-soliton and 2-soliton solutions, which are then written out in a physical form parameterized in terms of their speed, modulation frequency, and phase. Depending on the modulation frequency, the speeds of oscillatory waves (1-solitons) can be positive, negative, or zero, in contrast to the strictly positive speed of ordinary solitons. When the speed is zero, an oscillatory wave is a time-periodic standing wave. Properties of the amplitude and phase of oscillatory 1-solitons are derived. Oscillatory 2-solitons are graphically illustrated to describe collisions between two oscillatory 1-solitons in the case when the speeds are distinct. In the special case of equal speeds, oscillatory 2-solitons are shown to reduce to harmonically modulated breather waves.
    Print ISSN: 0022-2488
    Electronic ISSN: 1089-7658
    Topics: Mathematics , Physics
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  • 3
    Publication Date: 2016-09-17
    Description: A photo-induced electron paramagnetic resonance (EPR) attributed to beryllium-related acceptors was identified in GaN:Be substrates grown by the high nitrogen pressure solution technique. The acceptors, initially compensated by shallow O-related donors, were observed after illumination with photon energy greater than 2.7 eV. To adequately fit the time-dependent photo-EPR data over time periods up to 90 min, a two-defect model was developed based on three charge transfer processes: (1) photo-excitation of electrons from compensated acceptors, (2) electron capture by the positively charged donors and neutral acceptors directly from the conduction band, and (3) electron transfer from the donors to acceptors. The analysis of the spectral dependence of the optical cross section leads to the Be-related acceptor level lying 0.7 eV above the valence band maximum, consistent with the role of the acceptor as a compensating center as well as the 2.2 eV luminescence that others observed from these and other GaN:Be samples.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 4
    Publication Date: 2016-10-13
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6895-6897 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-consistent electronic structure calculations are used to study the changes in magnetic properties (specifically the magnetocrystalline anisotropy and exchange coupling) of a Co1Pt5 superlattice induced by a grain boundary. Guided by experiment, several possible grain boundaries have been studied, and we find as a result of calculations that the intergrain exchange coupling can be reduced by up to an order of magnitude. The local anisotropy is also reduced in the neighborhood of the boundary. These calculations are aimed at developing a more realistic description of magnetic thin films that takes into account details of the microstructure and thereby provide input to micromagnetic simulations. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4293-4295 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation, and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be 1.5(±0.3)×10−16 cm2/s and 5.5(±1.0)×1018/cm3, respectively, at 850 °C by fitting experimentally obtained profiles. This value of diffusion coefficient is at least two orders of magnitude lower than the minimum value reported in the literature for B diffusion in Ge. The results are significant as they question the general agreement about vacancy diffusion as the mechanism responsible for diffusion of B in Ge. © 2001 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2392-2397 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of 10B in the presence of high-concentration 11B and As doping has been studied. Dopants were introduced by ion implantation and profiles after annealing were obtained by secondary ion mass spectrometry. Diffusion coefficients were derived by comparing experimental profiles with those from a computer simulation program and results confirmed that diffusion of boron is enhanced in p+ silicon and depressed in n+ silicon. These results have been analyzed using the widely accepted vacancy model for boron diffusion and have produced values of the parameter β, which is related to the ratio of diffusivity for charged and uncharged vacancies, of 0.25 to 3.0 for the p+ and 3.0 to 7.7 for the n+ conditions. This difference cannot be ascribed to experimental error and suggests that further refinement of the vacancy model is required.
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