ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Carbon nitride films with β-C3N4 crystals of 200 nm grain size were grown on Si (100) substrates using magnetron sputtering. Reactive deposition was achieved using a graphite target in an argon/nitrogen plasma at room temperature. These films were characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), x-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), and Raman spectroscopy. Micro level β-C3N4 crystal grains were observed with TEM. According to calculations from electron diffraction pattern, these crystalline structures were in a good agreement with hypothetical b-C3N4 structure. AFM measurement also indicated the grain size was around 200 nm and the carbon nitride films had low surface roughness. From XPS data, maximum N/C ratio of 0.5 was achieved in the films. XPS spectra of the films typically showed three peaks in the C 1s core level spectrum (centered at 284.6, 285.9, and 287.2 eV) and two peaks in the N 1s core level spectrum (centered at 398.7 and 400.2 eV). This indicates that there are two types of C–N bonds; N is bonded to sp2- or sp3-coordinated C atoms in the as-deposited films. FTIR spectra showed three absorption bands in the range of 1000–3000 cm−1. The absorption band around 2367 cm−1 can be attributed to C(Triple Bond)N nitrile bond. The absorption bands around 1559 and 1201 cm−1 demonstrate the existence of C(Double Bond)N (sp2) and C–N (sp3) bonds. Analysis of Raman spectrum further demonstrated the coexistence of sp, sp2, and sp3 bonds. All of XPS, FTIR, and Raman measurements showed the presence of fourfold coordinated β-C3N4 crystals in the films, which is in good agreement with TEM and electron diffraction results. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1327603
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