Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 1243-1245
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Successful growth of silicon in a liquid phase epitaxial (LPE) system requires preventing the formation of a native oxide more than a few monolayers thick. It has been found that the desorption of oxygen and water vapor from the ends of the furnace tube can lead to oxidation of silicon wafers located in the tube center, thus inhibiting epitaxy. A simple method to avoid this problem and eliminate the need for long flush times is described. Evidence is presented that indium, a common solvent in LPE of silicon, plays a catalytic role in the oxidation of silicon. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113250
Permalink
|
Location |
Call Number |
Expected |
Availability |