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  • 1
    Electronic Resource
    Electronic Resource
    Precipitation and relaxation in strained Si1−yCy/Si heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3656-3668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the thermal stability of Si1−yCy/Si (y=0.007 and 0.014) heterostructures formed by solid phase epitaxial regrowth of C implanted layers. The loss of substitutional C was monitored over a temperature range of 810–925 °C using Fourier transform infrared absorbance spectroscopy. Concurrent strain measurements were performed using rocking curve x-ray diffraction to correlate strain relaxation with the loss of substitutional C from the lattice. Loss of C from the lattice was initiated immediately without an incubation period, indicative of a low barrier to C clustering. The activation energy as calculated from a time to 50% completion analysis (3.3±5 eV) is near the activation energy for the diffusion of C in Si. Over the entire temperature range studied, annealing to complete loss of substitutional C resulted in the precipitation of C into β-SiC. The precipitates are nearly spherical with diameters of 2–4 nm. These precipitates have the same crystallographic orientation as the Si matrix but the interfaces between the Si and β-SiC precipitates are incoherent. During the initial stages of precipitation, however, C-rich clusters form which maintain coherency with the Si matrix so the biaxial strain in the heterostructure is partially retained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357429
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  • 2
    Electronic Resource
    Electronic Resource
    Measurement and modeling of boron diffusion in Si and strained Si1−xGex epitaxial layers during rapid thermal annealing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5520-5526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron concentration profiles in rapid thermally annealed Si and strained Si1−xGex in situ doped, epitaxial layers were measured using secondary-ion-mass spectroscopy. Comparison of the Si1−xGex samples to the Si samples after rapid thermal annealing revealed a retarded B diffusivity inside the strained Si1−xGex layers. A simple empirical expression for the B retardation, which depended linearly on the Ge concentration, was developed and incorporated into a diffusion model for dopants in heterostructures. This model accurately simulated the measured B concentration profiles over a wide range of Ge fractions (0%–10%), B peak concentrations (2×1018–3×1019cm−3), and rapid thermal annealing conditions (900–1025 °C for 20–30 s).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354209
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  • 3
    Electronic Resource
    Electronic Resource
    Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 637-646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of heavily supersaturated C into Si using solid-phase epitaxy (SPE) of implanted amorphous layers. The strain in the Si1−xCx/Si heterostructures was measured using rocking curve x-ray diffraction. The microstructure and defect introduction were examined using ion channeling and transmission electron microscopy (TEM). The fraction of C located on substitutional lattice sites in the Si was monitored using Fourier transform infrared absorption spectroscopy and ion channeling at resonance energies. Carbon-depth profiles were monitored by secondary ion mass spectroscopy. The metastable solubility limit for the incorporation of C into Si by SPE was found to be 3.0–7.0×1020 atoms/cm3, which is over three orders of magnitude above the equilibrium solubility at the Si melting point. This limit was determined by the ability to regrow without the introduction of microtwins and stacking faults along {111} planes. We postulate the local bond deformation resulting from the atomic size difference between C and Si leads to the faceting of the amorphous–crystalline interface and allows defect introduction, thus limiting the C supersaturations achieved in Si by SPE. It was also found that the defect density in the regrown alloys could be reduced by higher SPE regrowth temperatures in rapid thermal anneal processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360806
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  • 4
    Electronic Resource
    Electronic Resource
    Hydrogen effusion from hydrogenated amorphous silicon caused by the deposition of a silicon nitride overlayer (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 39-41 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of silicon nitride (SiN) deposition on hydrogenated amorphous silicon (a-Si:H) has been investigated to find the origin of the difference of a-Si:H/SiN interface properties caused by the order of deposition. Sheet conductance of the on-state in inverted staggered (a-Si:H on SiN) thin-film transistors (TFTs) increases gradually with the substrate temperature (Tsub) of SiN, but decreases rapidly with the Tsub of SiN in staggered TFTs (SiN on a-Si:H). Photoluminescence experiments indicated that the degradation in staggered TFTs was due to the creation of defects in a-Si:H by the deposition of the SiN overlayer. It was shown by Fourier transform infrared attenuated total reflection that the origin of the defects was hydrogen effusion from a-Si:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104430
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of visible light emission from Co-silicided junctions with leakage current (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 387-389 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed visible light emission from Co-silicided junctions by emission microscopy. It was found that leakage current across the junction was accompanied by weak emission of light arising from spots distributed spatially on the electrode. In addition, the emission characteristics depended on the annealing temperature of the metallization process. It can be concluded that a plausible leakage origin is anomalous diffusion of Co, resulting in a locally high electric field. We also measured the energy dependence of the emission intensity and found that the emission intensity increases with decreasing photon energy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118420
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  • 6
    Electronic Resource
    Electronic Resource
    Ultra-low-temperature growth of high-integrity gate oxide films by low-energy ion-assisted oxidation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2223-2225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gate oxide films have been grown at a temperature as low as 450 °C by direct oxidation of silicon. Such a low-temperature oxidation has been realized by employing a precision controlled ion bombardment in an Ar/O2 mixed plasma for the surface activation. Perfectly controlled Ar ions give the bombardment energy for the oxide film growth. Dielectric breakdown fields of 10 MV/cm are achieved. Integration in a total low-temperature device process has been demonstrated by fabricating self-aligned Al-gate metal-oxide-silicon field effect transistor (MOSFET) formed without any heat processing over 450 °C. The precise control of the ion bombardment is quite essential for the low-temperature process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111680
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