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  • American Institute of Physics (AIP)  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8371-8376 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas-induced conductance changes were measured on palladium-dosed single-crystal tin oxide (SnO2) thin films having well-characterized surface properties. Films were fabricated using two methods: reactive sputtering and chemical vapor deposition. Film orientation and crystal structure were determined by x-ray diffraction, while surface morphology was characterized using atomic force microscopy. Conductance changes were measured continuously on film surfaces during alternating exposure and evacuation cycles to partial pressures of H2, O2, and CO in a vacuum chamber. The conductance change was found to be proportional to the square root of the initial film conductance and was interpreted in terms of gas-induced changes in the width of a near-surface space-charge layer. The variation of conductance as a function of gas pressure during alternating exposure and evacuation cycles of H2 and O2 is consistent with a model that involves surface reactions between coadsorbates.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal thin films of Pb(ZrxTi1−x)O3 (PZT) covering the full compositional range (0≤x≤1) were deposited by metal-organic chemical vapor deposition. Epitaxial SrRuO3(001) thin films grown on SrTiO3(001) substrates by rf-magnetron sputter deposition served as template electrode layers to promote the epitaxial growth of PZT. X-ray diffraction, energy-dispersive x-ray spectroscopy, atomic force microscopy, transmission electron microscopy, and optical waveguiding were used to characterize the crystalline structure, composition, surface morphology, microstructure, refractive index, and film thickness of the deposited films. The PZT films were single crystalline for all compositions exhibiting cube-on-cube growth epitaxy with the substrate and showed very high degrees of crystallinity and orientation. The films exhibited typical root mean square surface roughness of ∼1.0–2.5 nm. For tetragonal films, the surface morphology was dominated by grain tilting resulting from ferroelectric domain formation. We report the systematic compositional variation of the optical, dielectric, polarization, and electronic transport properties of these single-crystalline PZT thin films. We show that the solid-solution phase diagram of the PZT system for thin films differs from the bulk due to epitaxy-induced strains and interfacial defect formation. High values of remanant polarization (30–55 μC/cm2) were observed for ferroelectric compositions in the range of 0.8≤x≤0.2. Unlike previous studies, the dielectric constant exhibited a clear dependence on composition with values ranging from 225 to 650. The coercive fields decreased with increasing Zr concentration to a minimum of 20 kV/cm for x=0.8. The undoped films exhibited both high resistivity and dielectric-breakdown strength (1013–1014 Ω cm at 100 kV/cm and 300–700 kV/cm, respectively). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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