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  • 1
    Electronic Resource
    Electronic Resource
    Atomic force microscope lithography on carbonaceous films deposited by electron-beam irradiation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 716-718 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nanometer-scale mask that can be used for selective growth or selective etching was obtained by two-stage patterning. In the first step, a microscopic patterning was performed using a scanning electron microscope (SEM). In the SEM the mask was deposited by decomposition of residual oil molecules in the vicinity of the semiconductor surface. In the second stage, patterning of the carbonaceous film was made using an atomic force microscope (AFM). Use of the AFM assures not only a precise alignment with the previous marks but also a better resolution. Applying an electric bias between the conductive tip and the substrate surface previously covered with the carbonaceous film gave the local modification of the film composition. Further etching resulted in the pattern formation on the semiconductor surface with a minimum linewidth of ∼22 nm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120855
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  • 2
    Electronic Resource
    Electronic Resource
    Limits on quality factors of localized defect modes in photonic crystals due to dielectric loss (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6299-6304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectral widths of defect modes localized at line defects formed in a two-dimensional photonic crystal composed of a square lattice of dielectric cylinders were analyzed theoretically. The transmission spectra calculated by the layer-doubling method based on the vector–cylindrical–wave expansion of the internal field showed a rapid decrease of the spectral width with increasing number of the lattice layers when the dielectric loss is absent. Quality factors larger than 107 were predicted for the total lattice layers of 18. However, the numerical evaluation of the decay constant of the defect modes due to the imaginary part of the dielectric constant showed that the actual quality factor is limited by the dielectric loss. The calculated widths agreed qualitatively with the experimental observations by Lin et al. [Appl. Phys. Lett. 68, 3233 (1996)]. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368952
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of free-carrier-enhanced emission rate of carriers in depletion-edge region by constant capacitance technique (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2041-2045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rate of majority-carrier emission at the trap level located in the edge of the depletion layer is enhanced by the influence of a free-carrier tail. This causes a nonexponential change in transient capacitance with time after the application of a filling pulse. The emission rates of the midgap level in GaAs and the Au acceptor level in Si are measured by the constant capacitance technique which eliminates the additional nonexponential factor due to the high trap concentration. The apparent emission rate determined from the initial slope of transient voltage increases with decreasing the difference of the depletion widths in the emission and capture processes. The enhanced emission rate due to the free-carrier tail is observed even on the sample of the low carrier concentration. Fitting the calculated emission rate to the experimental results enables the estimation of the capture cross section of majority carriers in the trap level as well as the emission rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358842
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  • 4
    Electronic Resource
    Electronic Resource
    Reciprocal space maps of PbTe/SnTe superlattices (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3650-3653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbTe/SnTe superlattices were grown on (111) BaF2 substrates by molecular beam epitaxy using PbTe as buffer layers. The individual layer thickness and number of repetitions were chosen in order to change the strain profile in the superlattices from completely pseudomorphic to partially relaxed. The superlattices structural properties were investigated by making reciprocal space maps around the asymmetric (224) Bragg diffraction points and ω/2aitch-theta scans for the (222) diffraction with a high resolution diffractometer in the triple axis configuration. With the strain information obtained from the maps, the (222) ω/2aitch-theta scan was simulated by dynamical diffraction theory. The simulated spectra of the pseudomorphic superlattices, in which the in-plane lattice constant is assumed to be the same as the PbTe buffer throughout the superlattice, fitted in a remarkably good agreement with the measured data, indicating that almost structurally perfect samples were obtained. For the thicker superlattices, the (224) reciprocal space maps revealed a complex strain profile. Our results show the importance of detailed structural characterization on the interpretation of the electrical properties. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368540
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic force microscope based patterning of carbonaceous masks for selective area growth on semiconductor surfaces (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3158-3165 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbonaceous masks for selective growth on GaAs substrates were fabricated with high resolution by anodization with an atomic force microscope (AFM). Mask deposition is made by a 15-kV accelerated electron-beam irradiation in a scanning electron microscope. The local anodization of the carbonaceous film under intense electric field is investigated and the main factors for improving resolution and reproducibility are discussed. The "edge effect" of the anodized region, revealed in the electric-field distribution at the tip–water–film interfaces is identified as the main factor responsible for the resolution degradation during patterning. Short forward bias pulse for anodizing the carbonaceous film and the subsequent reverse bias pulse for neutralizing the space charge, locally accumulated during the forward bias, are shown to be effective for the higher pattern resolution and also for deepening the patterning depth. Based on the analysis, a modulated-amplitude pulsed bias mode is proposed and is demonstrated to bring a significant improvement in the resolution and the aspect ratio of patterns made by the anodization. Carbonaceous masks ready for selective area growth of semiconductors alloys were fabricated with the pattern resolution of ∼26 nm, limited by the curvature of AFM cantilever tips. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287763
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  • 6
    Electronic Resource
    Electronic Resource
    Strain determination in PbEuTe/PbTe multi-quantum wells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 725-729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of Pb1−xEuxTe/PbTe multi-quantum well (MQW) samples were grown on (111) cleaved BaF2 substrates by molecular beam epitaxy. The Eu content was maintained at x∼0.05–0.06 and the PbTe well width was varied from 23 to 206 Å. The samples were characterized structurally by high resolution x-ray diffraction in the triple axis configuration. The ω/2aitch-theta scans of the (222) Bragg reflection showed very well resolved satellite peaks up to the tenth-order for all samples indicating that sharp interfaces were obtained. Reciprocal space mapping around the (224) lattice point indicated that the MQW structure tended to the free-standing condition. The (222) ω/2aitch-theta scans were calculated by dynamical theory of x-ray diffraction and compared to the measured ones. Using the in-plane lattice constant as the main fitting parameter, the strain in the PbTe well inside the MQW structure was obtained as a function of its width. It decreased monotonically from an almost fully strained layer to 26% of strain relaxation as the PbTe well increased from 23 to 206 Å. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373728
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  • 7
    Electronic Resource
    Electronic Resource
    Hole activation from GaAs:Zn nanoclusters for p-type conduction in ZnSe (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1701-1703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of p-type ZnSe has been limited to nitrogen doping in molecular-beam epitaxy. As an alternative to nitrogen doping, GaAs cluster doping is proposed in this letter, where GaAs has small lattice mismatch of 0.28% to ZnSe and can potentially be heavily doped in p type. Hole activation to the valence band of the ZnSe layers could be observed by the reduction of the thickness of the GaAs layers in order to form nanoclusters. This was achieved with alternate supplies of triethylgallium and trisdimethylaminoarsenic, and the net acceptor concentration of ∼1017 cm−3 was observed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126141
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  • 8
    Electronic Resource
    Electronic Resource
    Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 550-552 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125851
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  • 9
    Electronic Resource
    Electronic Resource
    Semiconductor photonic dots: Visible wavelength-sized optical resonators (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1963-1965 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Here we describe a strategy toward constructing semiconductor photonic dots in the ultraviolet to blue region. An array of ZnS dots was grown on a GaAs substrate with a selective growth method. The ZnS dots have a pyramidal structure with the base plane of 800 nm square and the height of 300 nm. The {034} crystallographic planes form the sidewalls of the pyramids. Therefore, the size of the pyramidal dots is uniquely determined by the mask patterning. The optical reflection spectra showed clear resonance peaks which are reasonably assigned by the calculation of the resonance modes. Each resonance showed the Q values on the order of 160–300, a reasonable value to observe the modification of the total spontaneous emission rate in this kind of photonic dots. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123714
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  • 10
    Electronic Resource
    Electronic Resource
    Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2822-2824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy of PbTe on BaF2 (111) is studied using UHV–scanning tunneling microscopy and atomic force microscopy. It is shown that PbTe growth is totally dominated by growth spirals formed around threading dislocations (TD) that originate from the growth on the 4.2% lattice-mismatched substrate. Due to dislocation annihilation, the TD density rapidly decreases with layer thickness, which results in a dramatic increase of the electron mobilities in the layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116855
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