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Inter-conduction band electron relaxation dynamics in 6H–SiC (2001)

Tomita, T. ; Saito, S. ; Suemoto, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 1279-1281

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The ultrafast inter-conduction band carrier dynamics in 6H–SiC was observed by using pump and probe transient absorption technique. Probe wavelength dependence of the bleaching was compared with the steady-state absorption profiles for polarizations parallel and perpendicular to the c axis, and these bleachings were ascribed to the decrease of electron populations in the lowest conduction band. The relaxation time from the higher to the lowest conduction band due to the inter-conduction band electron–phonon scattering is 1.25 ps. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1399304

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