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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5138-5143 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The purpose of the research described in this article was to synthesize molybdenum nitride films with well-defined structures and stoichiometries using ion beam assisted deposition (IBAD). Approximately 400 nm thick films were prepared by the evaporative deposition of molybdenum while simultaneously bombarding the growing film with low energy (250–1000 eV) nitrogen ions. The effects of ion-to-atom arrival rate ratio, ion angle of incidence, and ion energy on the film composition and phase constituents were examined. The film nitrogen to molybdenum stoichiometry increased linearly with increasing arrival rate ratio irrespective of the ion energy and varied significantly with changes in the ion angle of incidence. The latter was interpreted based on sputtering and reflection effects. The phase constituents were functions of all of the deposition parameters investigated. We propose that a single parameter, the effective energy density per deposited atom, can account for the effects of ion energy, mass, and angle of incidence. The effective energy density is approximately the ion energy divided by the ion range. The range incorporates the effects of ion mass and angle of incidence, as well as the energy. For low energy ions the energy density per depositing atom is proportional to E1/2, a dependence that it shares with other models that have been developed to account for phase formation during IBAD. The advantage of the energy density treatment is that it has a more obvious influence on the temperature in the growth zone, a factor controlling phase formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7111-7117 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport properties of zone-melt-recrystallized Si films of Si-on-Insulator wafers were investigated using resistivity and Hall effect measurements between 77 and 300 K. Both graphite strip and cold cathode electron beam methods were used for zone melting which produced high resistivity ((approximately-greater-than)103 Ω cm at room temperature) recrystallized films. Phosphorus implantation into the silicon films to a dopant level of 1×1016 cm−3 and subsequent annealing at 1100 °C reduced the room-temperature resistivities to ∼1 Ω cm. Hall mobilities of 950 cm2/V s were observed at room temperature for both materials after the implant anneal sequence. However, for temperatures less than 150 K, the mobility is higher in graphite strip than in electron beam recrystallized films. This behavior is consistent with the relative crystalline qualities of the two films as determined by electron channeling and x-ray diffraction. It is noteworthy that a deep level was observed at 0.2 eV below the conduction band in the graphite strip recrystallized film but not in the electron beam recrystallized samples.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4760-4769 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-insulator layers produced by the processes of oxygen implantation into single-crystal silicon substrates, zone melt recrystallization of deposited polysilicon films, and silicon epitaxy on sapphire substrates have been examined by an improved x-ray-diffraction technique. The technique incorporates a position-sensitive x-ray detector placed on the 2θ arm of a conventional double-crystal diffractometer, thus allowing the measurement of scattered x-ray intensity in both the incident and diffracted x-ray beam angles simultaneously. X-ray scattering intensity maps plotted in k space reveal the relative strain and mosaic spread of the silicon overlayers with respect to the (001) silicon substrates. Oxygen-implanted films and graphite strip recrystallized films exhibit mosaic spreads (〈±0.08° and ±0.05°, respectively) approaching that of bulk single-crystal Si. The electron-beam-recrystallized films exhibit significantly larger mosaic spreads (≈±0.52°). These silicon overlayer films all exhibit similar perpendicular strain values with an average of approximately 0.08%. Silicon layers produced by both zone melt recrystallization techniques contain a preferential tilt of the diffraction planes along the recrystallization scan direction with respect to the underlying (001)-oriented silicon substrate. Silicon-on-sapphire samples exhibit both a large mosaic spread (±0.18°) and a large perpendicular strain (0.13%). These x-ray results are consistent with crystalline data taken by backscattered electron images and Rutherford ion backscattering.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3235-3240 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Composition-dependent optical and electrical properties of (Al2O3)1−c-(AlN)c composite films (0≤c≤1) are investigated herein. The films are deposited by the laser-assisted, chemical-vapor-deposition (L-CVD) technique. Film composition is controlled by background vacuum level (e.g., O2) and substrate temperature. Optical parameters of the oxynitride films on quartz substrates are evaluated from spectrophotometric transmittance characteristics. Infrared absorption spectra are used to identify chemical composition of the films. Electrical-field-dependent current flow mechanisms are investigated for Al-insulator-n-Si metal-insulator-semiconductor (MIS) structures. Current-voltage (I-V) characteristics of the MIS structures exhibit two alternative states: the original and the programmed states. The original state I-V characteristics are obtained for virgin films by first application of the tracing voltage. Current density versus electric field follows both exp E and exp (E)1/2 regions. The MIS structure makes a transition from the original to a programmed state at high electric field due to the establishment of a persistent polarization field. Programmed MIS structures exhibit two alternative I-V characteristics corresponding to whether the applied and the polarization field are in the same or opposite directions. Capacitance-voltage (C-V) characteristics of L-CVD (Al2O3)1−c-(AlN)c devices exhibit composition-dependent hysteresis. A large clockwise hysteresis is observed for AlN while smaller size anticlockwise hysteresis is obtained for the Al2O3 case.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3326-3328 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. © 1999 American Institute of Physics.
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A grain-size-dependent reduction in the room-temperature thermal conductivity of nanocrystalline yttria-stabilized zirconia is reported for the first time. Films were grown by metal-organic chemical vapor deposition with controlled grain sizes from 10 to 100 nm. For grain sizes smaller than approximately 30 nm, a substantial reduction in thermal conductivity was observed, reaching a value of less than one-third the bulk value at the smallest grain sizes measured. The observed behavior is consistent with expectations based on an estimation of the phonon mean-free path in zirconia.© 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1820-1822 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process of hydrogen-induced amorphization of the equilibrium intermetallic compound Zr3Al is compared to ion-irradiation-induced amorphization of the same compound. In contrast to ion irradiation, where almost complete chemical disordering precedes the onset of amorphization, hydrogenation of Zr3Al causes no appreciable change in long-range order prior to amorphization. Electron microscopy reveals apparent homogeneous nucleation of the amorphous phase, and striking similarities to martensitic microstructures. The maximum lattice dilation observed prior to amorphization by hydrogen absorption is identical to that found during irradiation, indicating that lattice expansion is a common measure of the crystal instability induced by different solid-state processing techniques.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3144-3146 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ generated arsenic hydrides are reacted downstream with trimethylgallium (TMGa), both in the presence of and in the absence of a downstream hydrogen afterglow plasma. The homoepitaxial activation energy dramatically changes from 62 kcal/mol for the pure thermal to 21 kcal/mol for the plasma-assisted growth. The carbon incorporation mechanism for the plasma-assisted growth at temperatures less than 400 °C has a distinct activation energy for carbon incorporation of 23 kcal/mol, independent of V-III ratios. At temperatures above 400 °C, the level of carbon incorporated in the films reaches a level that appears to be dependent on the gas-phase precursor V-III ratio. The activation energy of the low-temperature region is consistent with the surface decomposition of arsenic hydrides.
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