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  • 1
    Electronic Resource
    Electronic Resource
    Transient absorption and its influence on energy extraction in a discharge-pumped F2 laser (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1304-1310 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small-signal transient absorption of a discharge-pumped F2 laser (157.6 nm) medium was measured by using a Raman-shifted F2 laser (168.6 nm). The small-signal total absorption was obtained for 6 atm laser media at an excitation rate of ∼26 MW/cm3, where a small-signal net gain was independently measured to ∼35%/cm, as the sum of a transient absorption of ∼2.5%/cm and a stationary absorption of ∼0.5%/cm. In spite of the relatively large gain-to-loss ratio a significantly low maximum laser intensity of ∼2 MW/cm2, which gives zero extraction efficiency in the F2 laser medium, measured in heavily saturated F2 laser amplification experiments, suggests that the energy extraction is limited by additional absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356408
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  • 2
    Electronic Resource
    Electronic Resource
    Photorefractive effect in a poled polymer containing the tricyanovinylcarbazole group (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3617-3619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photorefractive properties of a poled polymer containing the tricyanovinylcarbazole group with an alkylene spacer are investigated by four-wave mixing experiments and Mach–Zehnder type electro-optic measurements. The photorefractive effect is demonstrated in a polymer that shows both the photoconductivity and the electro-optic effect intrinsically.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354501
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  • 3
    Electronic Resource
    Electronic Resource
    Development of a 48-turn thin-film head (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4857-4859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A conventional 30-turn thin-film head does not yield sufficient output when applied to a small-size rigid disk drive, especially 3.5 in. or less. A head of higher output voltage with more turns is required to obtain larger signal-to-noise ratio. A 48-turn thin-film head with two-layered spiral coil has been successfully developed, and 1.6 times the output voltage and larger signal-to-noise ratio by about 3 dB compared with the conventional 30-turn head were obtained. The head has a 0.55-μm gap length, 17-μm track width, and 4-μm-thick Permalloy films on the 3370-type slider. Yoke length was designed to be the same as that of the 30-turn head to prevent the reduction of the head efficiency. To minimize the increase of the coil resistance due to increasing the coil turns, the copper coil was fabricated with a high-aspect-ratio process using oxygen-ion milling of photoresist. Coil width was 3 μm; coil pitch was 4.5 μm, and coil thickness was 4 μm. These heads were evaluated using a 3.5-in. sputtered disk and showed good electromagnetic performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344758
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of multilayer reflectors and position sensitive detectors in the 45–300 A(ring) region : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1513-1515 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Multilayer reflectors and position sensitive detectors have been developed in constructing imaging optical systems in the 45–300 A(ring) region. Molybdenum-silicon (2d=140 A(ring), N=20) and nickel–carbon (2d=100 A(ring), N=20) multilayers were deposited on a spherical mirror (25 cm in diameter) for the normal incidence and on a segment of paraboloidal mirror (20 cm×10 cm) for 30° grazing incidence. Their optical characteristics were evaluated by using characteristic x rays and monochromatized synchrotron radiation in the 45–300 A(ring) region. A position sensitive detector is made of a tandem microchannel plate (MCP) with a CsI photocathode and resistive plate, which is placed at the focal plane of each mirror. The detection efficiency and position resolution were measured by using characteristic x rays of CKα and monochromatized synchrotron radiation in the 45–200 A(ring) region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143008
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  • 5
    Electronic Resource
    Electronic Resource
    XAFS measurements at high temperatures and pressures : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1382-1384 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The method of XAFS measurements at high temperatures and pressures for supercritical fluids with high critical constants have been developed. An internally heated high-pressure vessel made of super-high-tension steel and a polycrystalline sapphire cell of our own design permit XAFS measurement up to 800 bar. XAFS experiments were carried out at high temperatures up to 1600 °C, and high pressures up to 150 bar. XAFS spectra of liquid Se at 1300 °C and 150 bar, and dense Se vapor at 1600 °C and 150 bar have been obtained and clear oscillations are observed at these temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145982
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of platinum–carbon, tungsten–silicon, and tungsten–B4C multilayers : Proceedings of the 4th international conference on synchrotron radiation instrumentation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1217-1220 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Multilayers of Pt/C, W/Si, and W/B4C have been developed as a reflector and dispersive element to be applied to the beamline optical system of the synchrotron radiation (SR) in 1- to 20-A region. Pt/C(2d=105 A, N=10) overcoated with Pt(d=100 A) is useful in a glazing incidence optics, which makes it possible to extend the wavelength region to the shorter side at the fixed incidence angle. W/Si(2d=53 A, N=200) and W/B4C(2d=31 A, N=300) are utilized as a dispersive element of double-crystal monochromator (DXM). The second order of Bragg reflection of W/Si is matched to the first order of KAP(2d=26.6 A) crystal. The characterization of these multilayers was carried out by using characteristic x rays and monochromatized SR in 1.5–8 keV. DXM was made of a combination of W/Si and KAP and a pair of W/B4C. Multilayers are used as the first crystal to protect the damage of the crystal caused by the strong irradiation of SR. A pair of W/B4C is aimed at getting high throughput. The energy resolution of these combinations was evaluated with Na–K absorption edge of NaCl around 1.07 keV, which was a bit poor compared to a pair of beryl crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143087
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  • 7
    Electronic Resource
    Electronic Resource
    Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and N (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 235-237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown high-crystallinity ZnO thin films on lattice-matched ScAlMgO4 substrates by pulsed-laser deposition with doping donor (Ga) and acceptor (N) simultaneously. Alternating ablation of ceramics with concentrated Ga addition and highly pure single crystal targets yielded in a controlled Ga concentration (CGa) in a wide range of 1018–1020 cm−3 with minimal contamination of undesired impurities such as Al and Si. The use of the originally developed temperature-gradient method, where controlled and continuous gradient of the growth temperature is given to the single substrate with a range of about 50–200 °C, results in a continuous spread of N concentration (CN) in a controlled fashion. Therefore, the ratio of CN/CGa can be varied continuously in a wide range for each film, assuring that a region satisfying p-type codoping condition predicted by T. Yamamoto and H. K. Yoshida [Jpn. J. Appl. Phys., Part 2 38, L166 (1999)] is included in the sample. The electrical properties were measured for over thousand specimens of lithographically patterned Hall bars without observing any sign of p-type conduction. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491294
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  • 8
    Electronic Resource
    Electronic Resource
    Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2635-2637 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched (Δa/a=0.09%) ScAlMgO4(0001) substrates were employed to grow single crystalline quality ZnO films by laser molecular-beam epitaxy. Extremely smooth surface represented by atomically flat terraces and half unit cell (0.26 nm) high steps and extremely small orientation fluctuations both in-plane (〈0.02°) and out-of-plane (〈0.01°) are achieved. The films have high mobility (∼100 cm2/V s) together with low residual carrier concentration (∼1015 cm−3). Excellent optical properties, including a clear doublet of A and B exciton peaks in absorption spectra, were also observed. These features could not be simultaneously achieved for ZnO films grown on sapphire(0001) having a large lattice mismatch (Δa/a=18%). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125102
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  • 9
    Electronic Resource
    Electronic Resource
    Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2204-2206 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of stimulated emission in ZnO/MgxZn1−xO superlattices well above room temperature. Two kinds of superlattices grown by laser molecular-beam epitaxy showed clear systematics on the quantum subband levels in absorption and spontaneous emission spectra. Stimulated emission with excitonic origin could be observed at very low optical pumping levels. The threshold excitation intensity changed from 11 to 40 kW/cm2, and the emission energy could be tuned between 3.2 and 3.4 eV, depending on the well thickness and/or the Mg content in the barrier layers. The excitonic stimulated emission could be observed up to 373 K and the characteristic temperature was as high as 87 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315340
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  • 10
    Electronic Resource
    Electronic Resource
    Optimizing power extraction in stretched-pulse fiber ring lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3691-3693 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variable output coupling scheme is described for a stretched-pulse polarization additive pulse mode-locked (APM) fiber ring laser. The scheme allows the coupling percentage to be changed while the laser is running and allows for the maximum possible power extraction before cavity losses inhibit mode-locked operation. We describe how the nonlinear pulse dynamics change to compensate the change in cavity loss. Compared to high power output coupling schemes that use the APM rejection port, this method provides cleaner output pulses at comparable output powers. Pulse energies of 0.39 nJ are obtained at 48% output coupling in a diode-pumped system. 88 fs pulses with time-bandwidth products of 0.49 are obtained after output chirp compensation using a silicon prism pair. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115351
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