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  • 1
    Electronic Resource
    Electronic Resource
    Lasing characteristics of 0.8-μm InGaAsP/GaAs lasers fabricated by wet chemical etching (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3767-3772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.8-μm InGaAsP/GaAs stripe lasers, in which cavity mirrors were formed by two-step wet chemical etching, have been fabricated monolithically. The laser resonators were aligned along the 〈011¯〉 and the 〈010〉 directions. The first etching was done in 5% Br methanol. The secondary etching was done in H2SO4:H2O2:H2O (3:1:1 by volume) etchant for the active layers only, and gave low threshold lasers. Their threshold current densities were compared with those of the cleaved-mirror lasers made from the same wafer. Some longitudinal lasing modes were observed in the wavelength range of 805–810 nm. The characteristic temperature T0 was 116 K in the temperature range 28–87 °C. The relationship between the state of the etched facets and the near- and far-field patterns was examined. It was found that this two-step etching technique for the laser mirrors is very suitable for aligning the lasers along desirable directions on the same wafer for monolithic integrated optical circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343387
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  • 2
    Electronic Resource
    Electronic Resource
    A simple method for monolithic fabrication of InGaAsP/GaAs lasers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2770-2772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method for the fabrication of Fabry–Perot mirrors of InGaAsP/GaAs lasers is presented. The vertical and smooth wall etching is done for active layers only (not for both active and cladding layers), by an H2SO4:H2O2:H2O=3:1:1 etchant for 2–5 s. Since the active layers are much thinner than the cladding layers, the etching becomes much easier. The threshold current density of the etched mirror laser is ∼4.4 kA/cm2, about 1.1 times that of the cleaved laser, and the mirror reflectivity is evaluated as 29.4% (cleaved 31.4%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341626
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  • 3
    Electronic Resource
    Electronic Resource
    High precision polarimeter system for atomic polarization and tilted-foil experiments with 1.7 keV/amu 14N+ beam (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2045-2049 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high precision atomic polarimeter system for the use in beam-foil spectroscopy experiments with a few keV/amu heavy-ion beams has been developed. The polarimeter measures the circular polarization of fluorescences from the beam ion in-flight after the beam–foil interaction. The present system has two identical such polarimeters in both sides of the beam axis to reduce the systematic errors such due to the fluctuations of beam current, background and so on. A successful use of an ultrathin carbon foil (1.5 μg/cm2), which was durable for several hours against a few hundred nA beam irradiation, enabled the beam–foil experiments with such low energy heavy-ion beams. A performance test of the polarimeter system was carried out in the tilted foil experiments with a 1.7 keV/amu 14N+ beam. The atomic polarization was observed for the transition 1s22s22p3p 1D→1s22s22p3p 1P, whose fluorescence wavelength is 399.5 nm, in the N+ ion (N II). The polarization was approximately −2% for the tilt angle of −40° and showed monotone increasing with increasing tilt angle up to +2% for +40°. The polarization at 0° was (0.002±0.25)%, which is highly consistent with the expected polarization of 0%. This result indicates the high reliability of the present polarimeter system. This is the first tilted-foil experiment at such low beam energy. The present experimental technique will be very useful for studies of the polarization mechanism of the beam–foil interaction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150576
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray study of a ferroelectric twin in poly(vinylidene fluoride) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 970-972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A possibility for ferroelectric twinning of 60° domains existing in the phase-I crystallite of poly(vinylidene fluoride) has been examined by the use of an x-ray diffraction method. Interdomain interference causes anomalous splitting of the calculated diffraction peaks. Anomalous changes in the profiles are observed for the crystallites in a film under electric fields up to 120 MV/m, and can be explained in terms of the twin structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98779
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  • 5
    Electronic Resource
    Electronic Resource
    New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs surface light-emitting diodes at 650-nm range (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2181-2185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs surface light-emitting diodes have been fabricated by liquid-phase epitaxy and rf sputtering methods. In this structure, indium-tin oxide acts as both an n-type cladding layer and a transparent conductor. Peak wavelength and full width at half maximum of the surface emitting spectrum were 653 and 17 nm, respectively. An output power of 1 mW was achieved at a current level of 66 mA, corresponding to a current density of 22 A/cm2 under pulsed operation for the diode with a 400 μm×450 μm emitting area. The optical emission was distributed over the entire emitting area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344315
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of InGaAsP surface treatment for indium-tin-oxide/InGaAsP/GaAs solar cells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3337-3341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performances of n-indium-tin-oxide (ITO)/n-InGaAsP/p-GaAs solar cells in which the chemical treatment at the ITO/InGaAsP heterointerface is varied are compared: HNO3 treatment, HCl treatment, and nontreatment. The cells with HNO3 treatment show good solar-cell performance in spite of large lattice mismatch between ITO and InGaAsP. Others do not show even rectifying behavior. The structure of the cells with HNO3 treatment is thought to be a semiconductor-insulator-semiconductor structure, and its current model follows the tunneling model. By Auger analysis the oxide layer, which is thought to be formed by HNO3 treatment, was ascertained. Using the heterostructure back-surface field for the cells with HNO3 treatment, the highest efficiency attained so far is 10.9% (total area) under AM1 illumination normalized to 100 mW/cm2; the corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.56 V, 28.8 mA/cm2, and 0.677, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344130
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  • 7
    Electronic Resource
    Electronic Resource
    Structure and element-specific magnetic moments of epitaxial face-centered-cubic FexNi1−x alloy ultrathin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6214-6216 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By core level x-ray photoelectron spectroscopy using an x-ray tube, ultrathin films of FexNi1−x alloys deposited epitaxially on a Cu(001) substrate have been investigated. Structural information is obtained by means of core level photoelectron diffraction. The angular dependent intensity scans reveal peaks corresponding to a face-centered-cubic lattice in the covered concentration range 0.08〈x〈0.9. Information on the local magnetic moments is obtained by observing the intensity asymmetry occurring when switching between directions of opposite magnetization (MLDAD). Both the Fe 2p3/2 and Ni 2p3/2 asymmetries show a maximum at about 50% Fe concentration. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370225
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic properties and domain structures in domain refined grain-oriented silicon steel (invited) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2966-2970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present paper is concerned with the development of low-loss grain-oriented silicon steel, and especially with the magnetic properties and domain structures in domain refined grain-oriented silicon steel. The effects of locally induced stress and slight magnetic flux emergence have been examined as possible nucleation centers for effective domain walls which contribute to magnetization. The fundamental phenomena and their origins have been discussed on the bases of experimental facts. It was concluded that these domain refining effects were based upon interactions between subdomains having transverse magnetization, which originate from magnetic free poles and/or internal stress, and tensile stress in silicon steel with orientation near (110)[001]. The features of magnetic properties and domain structures of domain refined grain-oriented silicon steel both for stack and wound cores are described. Finally, a new technique for raising the degree of (110)(001) orientation is introduced, and the approach to minimum loss in grain-oriented silicon steel is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340917
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication methods for InGaAsP/GaAs visible laser structure with AlGaAs burying layers grown by liquid-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 761-768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid-phase-epitaxial (LPE) growth of AlGaAs layers has been used in fabricating InGaAsP buried heterostructure visible lasers on GaAs substrate. InGaAsP/InGaAsP double heterostructure wafers were grown on the p-type GaAs substrates by means of the melt-back method prior to the LPE growth for eliminating phosphorus contamination. An SiO2 film mask was deposited on the epitaxial wafer surface by the rf sputtering, and photoetched with stripes of 7–10 μm width in the 〈110〉 direction. After etching to the first p-InGaAsP cladding layer with a 3% Br-methanol solution, the second LPE growth of n-AlGaAs and p-GaAs layers was carried out. The InGaAsP active region is entirely surrounded by the InGaAsP cladding layers and the AlGaAs burying layer, therefore, it becomes possible to provide both lateral and vertical carrier and optical confinements. I-L characteristics were measured at room temperature under pulsed operation, but the lasing action was not obtained. The peak wavelength of the electroluminescence was 785 nm. The transverse mode behavior was analyzed by means of the effective refractive index approximation. And it seemed that this buried heterostructure is suitable for the transverse mode control of InGaAsP visible laser diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337034
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of phosphorus vapor ambient for InGaAsP growth on GaAs substrate (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3895-3899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For visible-light-emitting laser diodes, InGaAsP double heterostructures have been grown on GaAs substrates using liquid-phase epitaxy. As the growth temperature is as high as about 780 °C, a large amount of phosphorus evaporates from the solutions for the cladding layers during the growth process. The phosphorus vapor disturbs the solution composition for the active layer, so that very thin and uniform active layers cannot be obtained. By using In-P-Sn solution and supplying the phosphorus partial pressure around the graphite boat, the influence of phosphorus vapor ambient for InGaAsP (λPL=805 nm) growth is confirmed. When the phosphorus partial pressure increases, the surface of epitaxial layer becomes rough and the substrate is partly etched back. From x-ray diffraction and photoluminescence spectral measurements, the composition of the grown layer is also found to be changed. As a result of increasing the flow rate of H2 gas in order to protect the solution for the active layer from phosphorus contamination, the double heterostructure wafers with the high-quality active layer can be obtained reproducibly. Thus, pulsed lasing operation at room temperature has been achieved. The lasing wavelength is 816 nm and the threshold current density is ∼4.6 kA/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337562
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