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  • 1
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    Contactless electrical conductivity measurement of metallic submicron-grain material: Application to the study of aluminum with severe plastic deformation (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-05-27
    Description: We measured the electrical conductivity σ of aluminum specimen consisting of submicron-grains by observing the AC magnetic susceptibility resulting from the eddy current. By using a commercial platform for magnetic measurement, contactless measurement of the relative electrical conductivity σ n of a nonmagnetic metal is possible over a wide temperature ( T ) range. By referring to σ at room temperature, obtained by the four-terminal method, σ n ( T ) was transformed into σ ( T ). This approach is useful for cylinder specimens, in which the estimation of the radius and/or volume is difficult. An experiment in which aluminum underwent accumulative roll bonding, which is a severe plastic deformation process, validated this method of evaluating σ as a function of the fraction of high-angle grain boundaries.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 2
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    Spinodally decomposed nanostructures in a TiO2–VO2 crystal (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-05-07
    Description: We have prepared a single crystal of Ti 0.4 V 0.6 O 2 which forms a solid solution crystallizing in the rutile structure at high temperatures and undergoes phase separation due to the spinodal decomposition when cooled to room temperature. The spinodally decomposed crystal consists of a self-assembled, mega stack of alternate Ti- and V-rich layers with an approximate period of 33 nm along the c axis. The unidirectional microstructure causes a large anisotropy in resistivity and a small one in thermal conductivity. A sharp metal–insulator transition as well as a structural transition to a monoclinic structure is observed in the thin V-rich layers.
    Electronic ISSN: 2166-532X
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by American Institute of Physics (AIP)
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  • 3
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    Comparison of volume distribution of magnetic nanoparticles obtained from M-H curve with a mixture of log-normal distributions (2015)
    American Institute of Physics (AIP)
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    Publication Date: 2015-04-29
    Description: We studied the distributions of the magnetic moment and magnetic volume of magnetic nanoparticles (MNPs). These distributions were estimated by applying the singular value decomposition method to the M-H curve measured in the liquid phase. The estimated distributions were compared with a mixture of log-normal distributions, and two results agree well with each other. Using the estimated distribution of the magnetic moment, we also analyzed the M-H curve of immobilized MNPs in order to estimate the average value of the anisotropy energy constant K u and the characteristic time τ ON that determines the Neel relaxation of immobilized MNPs. The values K u and τ ON are estimated as 4 kJ/m 3 and 1 × 10 − 9 s, respectively, for Resovist MNPs.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 4
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    Characterization of the magnetic moment distribution in low-concentration solutions of iron oxide nanoparticles by a high-Tc superconducting quantum interference device magnetometer (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-04-24
    Description: We developed a highly sensitive AC/DC magnetometer using a high-temperature superconductor superconducting quantum interference device for the evaluation of magnetic nanoparticles in solutions. Using the developed system, we investigated the distribution of magnetic moments of iron oxide multi-core particles of 100 nm at various iron concentrations that are lower than 96  μ g/ml by analyzing the measured magnetization curves. Singular value decomposition and non-regularized non-negative least-squares methods were used during the reconstruction of the distribution. Similar distributions were obtained for all concentrations, and the iron concentration could be determined from the measured magnetization curves. The measured harmonics upon the excitation of AC and DC magnetic fields curves agreed well with the harmonics simulated based on the reconstructed magnetization curves, implying that the magnetization curves of magnetic nanoparticles were successfully obtained as we will show in the article. We compared the magnetization curves between multi-core particles of 100 nm and 130 nm, composed of 12-nm iron oxide nanoparticles. A distinctive magnetic property between the 100 nm and 130 nm particles in low-concentration solutions was successfully characterized. The distribution characteristic of magnetic moments suggests that the net magnetic moment in a multi-core particle is affected by the size of the magnetic cores and their degree of aggregation. Exploration of magnetic properties with high sensitivity can be expected using the developed system.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 5
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    Estimation of magnetic moment and anisotropy energy of magnetic markers for biosensing application (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-05-11
    Description: We present a method to evaluate the magnetic moment ( m ) and the anisotropy energy ( E ) of magnetic markers, which are the key parameters employed in biosensing applications. The distributions of the m and E values in the marker are evaluated by analyzing the static magnetization ( M-H ) curve of the suspended markers and the frequency dependence of the AC susceptibility of the immobilized markers, respectively. Then, we obtain the relationship between m and E . In the experiment, four markers made of multicore and single core nanoparticles are examined. We obtain distributions of the m and E values, which show the particular characteristics of each marker. Although the m and E values are widely distributed in the marker, a clear relationship is obtained between the values. Therefore, the obtained m-E curve, as well as the distribution of the m and E values, provides a framework to discuss the dynamic behavior of the immobilized markers. The difference in the estimated m-E curves between the markers is also discussed.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of p/i interface layer on dark J-V characteristics and Voc in p-i-n a-Si solar cells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3494-3499 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dark current-voltage (J-V) characteristics of p-i-n a-Si solar cells are studied to clarify the effect of the p/i interface layer on the open-circuit voltage (Voc). It is shown that the recombination current in the p/i interface region is predominant in the a-Si solar cells with an i-layer thickness of less than 200 nm and has a great effect on the dark-current transport in the solar cells. It is also shown that the current transport of the cells with the p/i interface layer of constant band gap of a thickness of more than 14 nm is effectively the same as that of a cell in which the band gap of the whole i layer is equal to that of the interface layer. A model in which the dark current of the cell consists of the recombination current at the p/i interface and the recombination current in the bulk region of the i layer is proposed. Using this model, the Voc degradation for the a-Si solar cells with the p/i interface layer is shown to be due to the defects generated in the i layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345340
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  • 7
    Electronic Resource
    Electronic Resource
    Luminescence and relaxation processes in Er3+-doped glass fibers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 938-941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence and related characteristics have been investigated for Er3+-doped silica glass fibers and for fibers and bulk material of calcium metaphosphate glass. Special interest has been directed toward elucidating relaxation processes leading to 1.5-μm light emission. Several emissions from higher excited states were investigated and excited-state lifetimes were also measured. Approximate radiative and nonradiative transition probabilities have been obtained for the excited levels. These results have confirmed that dominant transitions populating the lowest excited level are step-by-step nonradiative relaxations and that only a limited amount of energy is supplied via intermediate radiative transitions. It has also been shown that the 1.5-μm emission decay time constant elongates with increasing fiber length.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351317
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  • 8
    Electronic Resource
    Electronic Resource
    Foucault imaging of superconducting fluxons (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4096-4103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Foucault method, one of the classical Lorentz microscopy techniques, is here investigated in order to demonstrate its applicability to in-focus observations of superconducting fluxons. As the deflections involved are of the order of 10−5−10−6 rad, low-angle techniques, high brightness, coherent illumination, and a low aberration magnetic stage are needed. The first experimental results are presented and discussed in relation with a theoretical model for the fluxon which allows the interpretation of the main features of the observed patterns. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370317
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  • 9
    Electronic Resource
    Electronic Resource
    Small angle electron diffraction and Foucault mode Lorentz microscopy of superconducting vortex lattice (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1228-1230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small angle electron diffraction patterns from vortex lattices in Nb thin films were observed using a field emission transmission electron microscope. It was possible to obtain diffraction patterns in magnetic fields of up to 1000 G, from selected areas of (1–10) μm in diameter, and in (1–30) s. The degree of order of the vortex lattice was determined from the fine structure of the diffraction pattern. We also demonstrated Foucault mode Lorentz microscopy by using a diffraction technique. Vortices appeared by diffraction contrast in a focused micrograph, and therefore both vortices and material defects were simultaneously observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369347
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8311-8315 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This research is an attempt to apply thermal plasma chemical vapor deposition for the ultrafast deposition of Si films for solar cells. The improvement of stability, controllability, and cleanliness of the process enabled the deposition of μc-Si films at the ultrafast rate of over 1000 nm/s. Moreover, a minimum defect density of 7.2×1016 cm−3 was achieved. Monte-Carlo simulation and step coverage analysis suggested that the precursor is an approximately 1 nm cluster with a sticking probability of about 0.6. The success of this research may change the established concepts of Si deposition technology. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370365
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