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  • 1
    Electronic Resource
    Electronic Resource
    Iron-related deep levels in n-type silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3923-3927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in iron-doped n-type silicon have been investigated by deep-level transient spectroscopy (DLTS). Three deep levels of Ec−0.29 eV (E1), Ec−0.36 eV (E2), and Ec−0.48 eV (E3) were observed. The concentration of E1 and E2 levels increased during the storage at room temperature. The depth profile of the E3 level concentration indicates the out-diffusion and precipitation of the defects related to the E3 level. In addition, after annealing at 80 °C for 30 min, the E2 and E3 concentrations decreased and then recovered at room temperature. These results suggest that the defects related to these levels are mobile during quenching and storage at room temperature. The temperature dependence of the E3 level concentration shows a formation energy of about 2 eV, which is smaller than that of interstitial iron, and the E3 level concentration is two orders of magnitude lower than the concentration of interstitial iron. The origins of these levels are probably loosely associated iron-related complexes such as iron-acceptor pairs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343433
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  • 2
    Electronic Resource
    Electronic Resource
    Neutral carbon cluster distribution upon laser vaporization (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 9954-9956 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The mass distribution of neutral carbon clusters generated by a laser vaporization of graphite in He was safely determined by a single photon (10.5 eV) ionization technique. The resulting mass distribution was surprisingly different from those reported in previous articles. It was found that the carbon clusters generated under a moderate laser fluence condition (0.1–1 J/cm2) consists of mostly even-numbered monocyclic rings with the cluster sizes of n=10–18. The formation mechanism of such neutral carbon clusters upon laser irradiation is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473883
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of potassium-intercalated carbon nanotubes and their valence-band excitation spectra (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3739-3743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second-stage potassium-intercalated carbon nanotubes were synthesized in a specially designed ultrahigh vacuum analytical electron microscope and their valence-band excitation spectra in the region of the π+σ plasmon were measured by electron energy loss spectroscopy. The carbon nanostructures consisted of graphene sheets. Potassium was deposited in an ultrahigh vacuum at room temperature. As a result, a second stage of intercalated nanotubes was found to be formed close to the surface. The energy loss spectra of the intercalated nanotubes showed humps at about 16, 19, and 22 eV, in addition to those of unintercalated tubes. This suggests that intercalation modified the band structure of the interlayer bands and/or the σ(σ*) bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361207
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  • 4
    Electronic Resource
    Electronic Resource
    Reduction of noise from external sources for floppy disk heads : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5420-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel measurement technique and an analytical model for the determination of externally induced noise in floppy disk heads have been developed. Floppy disk heads are generally susceptible to magnetic fields from, among other things, machinery and CRTs. When an alternating magnetic field is applied to a floppy disk head, a magnetic flux will penetrate into the head, inducing a noise voltage in its coil. Since the floppy disk head has a complex geometry, the magnetic-flux distribution in the head is complicated. The distribution has been studied by a three-dimensional finite-element analysis and effective methods for reducing the noise voltage have been found. New heads have been fabricated according to the analysis results and a noise voltage reduced by 50% has been obtained. The measured noise voltages agree well with the calculated values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347997
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  • 5
    Electronic Resource
    Electronic Resource
    A molecular beam study of alkali promotion of NO sticking on Si(100): Local promotion in a single collision regime (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 3781-3793 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Alkali–metal (K and Cs) promotion for sticking of nitrogen oxide molecule (NO) on Si(100) has been studied using a molecular beam method combined with an Auger electron spectroscopy (AES) and a laser ionization spectroscopy [resonance enhanced multiphoton ionization (REMPI)]. The observed sticking probability S shows a good correlation with alkali coverage, indicating that the alkali promotion is local in nature. The decay of S as a function of NO dose as observed with AES shows an anticorrelation with the evolution of the direct-inelastic scattering intensity as obtained with REMPI. This fact is understood as follows: since the direct-inelastic scattering occurs mostly in a single collision process with the surface, local alkali promotion is realized in a single collision of the incident NO molecule with the alkali–metal adsorbates. The decay of S as a function of NO dose is then analyzed with a reaction cross section. The evaluated reaction cross sections are close to the area of the 2×1 unit cell, and thus the estimated reaction radii are almost equal to but somewhat larger than the covalent radius of a K atom, with a increasing trend with alkali coverage. The alkali promotion is explained in terms of local electron charge transfer from the nonionized alkali adatoms to the affinity level of NO molecules based on the adatom density of state around EF.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462959
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  • 6
    Electronic Resource
    Electronic Resource
    A computer simulation study on the detection efficiencies of parallel-plate electron multipliers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3483-3487 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The detection efficiencies of parallel-plate electron multipliers with a parallel electric field (PPEM-parallel) and with a tilted electric field (PPEM-tilt) have been calculated by a Monte Carlo simulation method. The detection efficiencies vary with the geometrical conditions of the dynodes such as the dynode spacing, the dynode displacement, and the dynode length. Under the optimum geometrical conditions that give the maximum mean gains, the PPEM-parallels have a detection efficiency of 75% and the PPEM-tilts have a detection efficiency of 70% for an incident electron energy of 300 eV. These values do not vary with the applied voltage. Detection efficiency versus incident electron energy curves has been obtained for the optimum geometrical conditions. The forms of these curves are almost the same for the PPEM-parallel and the PPEM-tilt and do not change with the applied voltage. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145458
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  • 7
    Electronic Resource
    Electronic Resource
    Attempt at LSI pattern demagnification by Bragg reflection : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2153-2156 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new method for pattern reduction in the x-ray region is proposed. In its principle was used the asymmetric Bragg reflection giving the different beamwidth in the reflected beam from the incident one. Light from an undulator line (BL-2) at the Photon Factory was used to obtain highly spatially resolved replication in reasonably short exposure time. Performed was one-dimensional demagnification of a pattern with a ratio of 1/4 in the following condition: Si 111 reflection was used where the offset angle α from the surface is 22° and the wavelength λ was 3.5 λ, which is available from the 7th harmonic of the undulator radiation. The submicron scale resist pattern was resolved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140806
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  • 8
    Electronic Resource
    Electronic Resource
    A new VUV beamline BL-19 for undulator radiation at the Photon Factory : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1893-1896 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new VUV beamline at the Photon Factory ring that is designed to accept radiation emitted from an undulator is described. The characteristics of the undulator and all parts of the beamline; a front end, a mirror system, and two monochromators, are described in detail. The characteristics of optical elements in the beamline are also shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140882
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  • 9
    Electronic Resource
    Electronic Resource
    A computer simulation study on electron multiplication of parallel-plate electron multipliers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 436-445 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Electron multiplication of parallel-plate electron multipliers with a parallel electric field (PPEM-parallel) and with a tilted electric field (PPEM-tilt) have been studied by a Monte Carlo simulation method. The optimum geometrical condition is represented with a ratio of the dynode length Ld to the dynode spacing Ds, Ld/Ds=0.040Vd, for the PPEM-parallel, and with a ratio of the dynode displacement Xd to the dynode spacing Ds, Xd/Ds=0.40, for the PPEM-tilt, where Vd is an applied voltage. For optimum geometrical conditions, the PPEM-parallel and the PPEM-tilt have almost equal characteristic properties of operation such as mean gain, pulse height distribution, and transit time distribution of secondary electrons. These are inherent results of the almost equivalent electron multiplication processes such as collision energy of secondaries and number of electron multiplication steps. A simplified analytical method is used to explain the computer simulation results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144213
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of thin-film Ni/single-crystal SiC interface reaction (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3747-3750 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interface reaction between Ni thin film and bulk SiC during heat treatment was investigated by MeV ion backscattering spectrometry using resonance scattering of helium-carbon, x-ray diffraction, and Auger electron spectroscopy (AES). Polycrystalline nickel-silicide, Ni2Si, was formed by heat treatment at 600 °C in forming gas. Carbon compounds were not detected in the reaction products. Carbon was distributed uniformly with a concentration of about 25 at. % in the reacted film, and the C KLL line shape of AES in the reaction products as similar to that of elementary carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339259
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