ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Orientational correlation in liquid phosphorous tribromide studied by pulsed neutron total scattering (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5486-5490 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Structure factor Sm(Q) of liquid phosphorous tribromide (PBr3) has been measured at room temperature by means of pulsed neutron total scattering technique. Characteristic features of the experimental Sm(Q) are analyzed in terms of preferred orientations introduced between the nearest neighbors as well as a packing of effectively uncorrelated molecules. The preferred orientation estimated in this analysis is such that a top (or a P atom) of pyramidal shape of each PBr3 molecule points in nearly the same direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458527
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen atom abstraction by O(3P) from diborane and ethane (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 6282-6289 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We measured, via LIF, time-dependent concentrations of OH resulting from the reaction of O(3 P) with B2H6 and C2H6. The oxygen atoms were generated by titrating microwave discharged N2 /He with NO to the chemiluminescent end point. The operating pressures in the flow reactor ranged from 5 to 15 Torr; the mixtures consisted of He/O(3 P)/fuel in the approximate ratios 100/1/0.1 to 100/1/1. Flow conditions were such that in the low pressure experiments the controlled residence time prior to detection were 0.8–17 ms; under the higher pressure conditions, the time interval covered was 2–35 ms. We estimated that the temperature of the reaction region was (approximate)350 K, based on rotational emission temperatures measured for BO*, generated under closely similar conditions. First a complete mechanism was derived for ethane for a specified set of experimental parameters. For ethane, a single set of experimental conditions was selected for ratioing the recorded intensity to the computed OH density; this was cross checked with other runs for ethane. Finally, a mechanism was developed for B2H6, which quantitatively checked our experimentally determined profiles both in shape and magnitude, for three sets of conditions, and within a factor of 2 for the high concentration runs (100% B2H6 feeding into the reactor at 14 Torr).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.454751
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Synchrotron radiation lithography system in an atmospheric environment (invited) : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1643-1648 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The atmospheric environmental exposure system for synchrotron radiation (SR) lithography has been integrated using the Photon Factory storage ring (2.5 GeV). The system, composed of a highly reliable beamline, an SR extracting chamber and a prototype SR stepper, aims at attaining higher accuracy and throughput. Based on a fail-safe mechanism notion, a double-vacuum protection system, in which two sets of a fast closing valve and acoustic delay line are installed in the main beamline and branch beamline, respectively, has been organized. Vacuum breakdown tests indicated that any vacuum breakdown, a beryllium (Be) window rupture in the worst case, exerts little influence on the storage ring ultrahigh vacuum. The SR extracting chamber, equipped with a Be window and an extraction window, is filled with helium at atmospheric pressure. Particularly, the 50-μm-thick, 35-mm-diam Be window, vacuum-sealed by a Viton O-ring, was preliminarily employed and, so far, has operated successfully, giving a 25-mm square exposure area. In terms of practical availability and simplicity, the SR stepper in an atmospheric environment has been constructed. A novel differential mode linear Fresnel zone plate alignment method, which can detect an alignment error between a mask and a wafer during exposure, was developed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141050
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Global breakdown in an alternating current plasma display panel (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4231-4239 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the alternating current plasma display panel, a widespread discharge can take place accidentally in a large number of cells in the upper or lower panel ends. The undesirable discharge is referred to as global breakdown. This is a serious problem, with consequences not only for display quality, but also for product reliability. The mechanism of the global breakdown was examined experimentally using a surface electrometer and theoretically using plasma simulation. From these examinations, the global breakdown mechanism was clarified as follows. Global breakdown was accompanied by charge separation in the horizontal direction of the panel. This charge separation was caused by electron transport downward in the panel during the address discharge. The electron transport formed a negative wall charge on the phosphor surface. When the wall voltage exceeded the insulation voltage of the protective layer, global breakdown occurred. Furthermore, it was clarified that increasing the front dielectric thickness or reducing the back dielectric thickness could suppress the electron transport during the address discharge. These optimizations of cell geometry could eliminate the global breakdown. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351058
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1678-1680 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of hydrogenated amorphous silicon (a-Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a-Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a-Si:H layer at 150 °C for 1 h while relaxed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101431
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Time-temperature-transformation study of a nanocrystalline Fe91Zr7B2 soft magnetic alloy : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5149-5151 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure, soft magnetic properties, magnetostriction, grain size and volume fraction of the residual amorphous phase have been studied for an amorphous Fe91Zr7B2 alloy annealed for periods of 60 s–1080 ks, at temperatures of 823–973 K. The highest permeability (at 1 kHz and 0.4 A/m) 31,000 and smallest coercivity 4.2 A/m are obtained for the sample annealed at 923 K for 60 s, where a small grain size (≈12 nm) and about 35% of the residual amorphous phase are measured. The coercivity of the nanocrystalline alloy varies as the 3rd power of the grain size, corresponding to the case where the magnetically coupled region has a dimensionality between two and three. This slightly low dimensionality is presumed to be due to the alignment of the magnetization in the sample plane. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361536
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Light emission from individual self-assembled InAs/GaAs quantum dots excited by tunneling current injection (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1460-1462 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report emission from individual quantum dots excited by tunneling current injection using a scanning tunneling microscope (STM). By scanning the STM tip above the self-assembled InAs quantum dots, a spatially resolved scanning tunneling luminescence (STL) image was measured, which contained a fluorescent circular region with a diameter of 50 nm originating from a single InAs quantum dot. It was found that the spatial resolution of the STL system was about 40 nm, which is mainly due to lateral diffusion of holes injected into a GaAs capping layer grown at low temperature (480 °C). We also obtained STL spectra with a sharp single luminescent peak from a single InAs quantum dot. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122174
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Reduction of threading dislocations by InGaAs interlayer in GaAs layers grown on Si substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2917-2919 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality GaAs epilayers with dislocation densities of 1.2×106 cm−2 on (100)Si substrates have been obtained by insertion of an InGaAs strained interlayer combined with thermal cycle annealing instead of strained layer superlattices. All the layers were grown by low-pressure metalorganic vapor phase epitaxy. The threading dislocation density near the surface of 4 μm thick GaAs was measured by plan-view transmission electron microscopy. The threading dislocation density was found to be very sensitive to the In composition of the interlayer and the specifics of thermal cycle annealing. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122629
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Structural anisotropy of Tb/Fe multilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6270-6272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the local structural anisotropy of Tb/Fe multilayers using linear polarized synchrotron radiation. X-ray absorption measurements were performed at Fe K edge (7.1 keV) using normal and glancing angle incident photon. From the Fe extended x-ray absorption fine structure (EXAFS), the local structural anisotropy was found for all multilayers as a slight difference of oscillation amplitude between the two incident directions. From the Fourier transformed EXAFS spectra, it is found that the local structural anisotropy shows the maximum at bilayer period of about 1 nm, where perpendicular magnetic anisotropy also shows the maximum value in various rare-earth/transition metal multilayers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362033
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Variable-energy positron-beam studies of SiO2/Si irradiated by ionizing radiation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 473-475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable-energy positron-beam studies have been carried out on Si with a 1.61 μm overlayer of SiO2 irradiated by x ray and γ ray up to the dose of 5×105 R. The Doppler broadening of annihilation photons was found to be strongly influenced by x-ray irradiation, and the effect was extended homogeneously over the entire oxide layer. A trapping model which neglects positron diffusion effects was applied to the dependence of the line shape parameter S on incident positron energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100616
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...