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  • 1
    Electronic Resource
    Electronic Resource
    Mono-sized single-wall carbon nanotubes formed in channels of AlPO4-5 single crystal (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2287-2289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An alternative approach to the synthesis of mono-sized and parallel-aligned single-wall carbon nanotubes (SWCNs) is reported. The SWCNs are formed in 0.73 nm sized channels of microporous aluminophosphate crystallites by pyrolysis of tripropylamine molecules in the channels. They are characterized through transmission electron microscopy, polarized Raman scattering, and electrical transport measurements. Our results would open a door to further detailed studies on the intrinsic properties of carbon nanotubes now in progress. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121704
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of defect states induced by air plasma process in n/n+ epitaxial silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1520-1525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of radio frequency (rf) air plasma process-induced defect states in 50 Ω cm n/n+ epitaxial silicon are investigated by junction capacitance techniques. Capacitance-voltage measurements reveal the presence of a thin oxide layer of about 180 A(ring) on the 30-min plasma treated silicon sample. Deep level transient spectroscopy shows the existence of various defects in the sample. These consists of a dominant bulk electron trap labelled as E(0.46) at 0.46 eV below the conduction band, as well as continuously distributed interface states. The spectral dependence of the optical cross section for the defect levels were measured by deep level optical spectroscopy. A simple analysis indicates that a phonon mode ((h-dash-bar)ωp=28 meV) couples to the defect E(0.46). Its electron-phonon coupling strength is rather weak with a Franck–Condon shift of 0.04 eV. Defect E(0.46) anneals out at a fairly low temperature of about 120 °C. Etching off the oxide layer in a diluted HF solution was found to eliminate the E(0.46) defect level. This is tentatively explained as due to passivation of the defect E(0.46) by hydrogen from the HF solution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346627
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  • 3
    Electronic Resource
    Electronic Resource
    Novel electrical and annealing properties of defects in electron irradiated silicon p+-n junctions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1535-1540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel results on defect annealing behavior and minority-carrier lifetime control in electron irradiated silicon p+-n junctions are presented. Two mechanisms are found to be involved in the annealing process of the divacancies; one dominates in the lower temperature range (from 240 to 300 °C) and the other dominates in the higher temperature range (from 320 to 360 °C). A defect labeld as E3 with an energy level at 0.37 eV below the conduction band is found to be an efficient recombination channel responsible for minority carrier lifetime control. The activation energy for dissociation of the defect E3 obtained from the annealing study is 1.7 eV, and the frequency factor is 2.8×109 s−1. Annealing of electron irradiated samples at about 300 °C, or performing the electron irradiation at a similar high temperature is found to increase the concentration of the defect E3, and stabilize the carrier lifetime. These processes might be useful to improve the thermal stability of devices like high-voltage rectifiers and thyristors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346629
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  • 4
    Electronic Resource
    Electronic Resource
    A plasma etching-induced defect state in electron-irradiated n-type bulk section (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 897-899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect states induced by radio frequency air plasma etching process in n-type bulk silicon have been studied. Deep level transient spectroscopy shows that a deep center with a small electron capture cross section σtn =1.3×10−20 cm−3 and an energy level at 0.41 eV below the conduction band was induced by plasma treatment of previously electron-irradiated Si samples. The spectral dependence of optical cross sections for this defect level was measured by deep level optical spectroscopy, showing that the defect has a strong electron-phonon coupling with a Franck–Condon shift of about 0.4 eV, and that the defect core is repulsive for electrons. The defect anneals out above 400 K, and is also slightly unstable at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346755
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  • 5
    Electronic Resource
    Electronic Resource
    The basis for the symmetric irreducible representations of SO(9) (1986)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 27 (1986), S. 442-446 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: An explicit basis is constructed for the symmetric irreducible representation (irrep) of SU(9)&supuline;SO(9)&supuline;SO(5)×SU1(2)×SU2(2). It is also indicated how good angular momentum states can be constructed. The techniques used are based on the well-known tensor algebra for the infinitesimal generators of simple Lie groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.527239
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  • 6
    Electronic Resource
    Electronic Resource
    Microstructure of columnar crystallites in Ni80Fe20/Cu magnetic multilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2835-2839 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used electron microscopy to investigate the microstructure of Ni80Fe20/Cu magnetic multilayers which were synthesized by dc magnetron sputtering. Columnar structure was found in the specimen with and without giant magnetoresistance (GMR). All the columnar crystallites (CCs) originate from the Fe buffer layer on silicon wafer or glass substrate and penetrate though all the multilayers up to the surface of the film. The lateral size of the CCs ranges from 10 to 30 nm. Cross-sectional high-resolution electron microscopy study shows that the CCs are single-crystal-like with fcc structure resulting from the epitaxial growth of NiFe and Cu sublayers. Electron diffraction contrast imaging and electron energy filtered elemental mapping confirmed that multilayer nature is maintained throughout the entire NiFe/Cu film. Grain boundaries between CCs can be the most likely place where NiFe or Cu bridging will occur. Columnar structure was also found in a Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve film. The possible influence of the columnar crystalline structure on the GMR related problems is discussed. The microstructure results revealed in this article provide useful information for the GMR property investigation of NiFe/Cu based metallic multilayers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372265
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  • 7
    Electronic Resource
    Electronic Resource
    Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1380-1385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1489716
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  • 8
    Electronic Resource
    Electronic Resource
    Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1993-1997 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of confinement on the exciton binding energies has been systematically investigated for two series of ZnO/ZnMgO multiquantum wells with various well widths and barrier heights. The exciton binding energies were extracted from the energy difference between the stimulated emission band induced by inelastic exciton–exciton scattering and the free exciton absorption band. The binding energies of excitons are found to be sensitively dependent on the well widths. The experimental results of the well width dependence of binding energies are in good agreement with Coli and Bajaj's theoretical calculations for these structures [G. Coli and K. K. Bajaj, Appl. Phys. Lett. 78, 2861 (2001)]. The remarkable reduction in coupling strength between excitons and longitudinal optical phonons is closely correlated with the enhancement of the exciton binding energy, indicating that the stability of excitons is greatly increased by the enhancement of exciton binding energy in quantum wells. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445280
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of excitonic absorption spectra in ZnO/Zn0.88Mg0.12O multiquantum wells grown on lattice-matched substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2464-2466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The excitonic properties of high-quality ZnO/Zn0.88Mg0.12O multiquantum wells grown by laser-molecular-beam epitaxy were investigated using temperature-dependent optical absorption spectra from 5 K to room temperature. The strength of exciton-longitudinal-optical (LO) -phonon coupling was deduced from the temperature dependence of the linewidth of the fundamental excitonic peak. Effective reduction of the exciton-LO-phonon coupling with decreasing the well width was observed, which is consistent with the confinement-induced enhancement of the exciton binding energy. The thermal shift of the lowest excitonic energy is independent of well width, indicating that the strain effect is negligible for this material. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367300
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  • 10
    Electronic Resource
    Electronic Resource
    Stimulated emission induced by exciton–exciton scattering in ZnO/ZnMgO multiquantum wells up to room temperature (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4250-4252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of ultraviolet stimulated emission was investigated in ZnO/ZnMgO multiquantum wells. Stimulated emission induced by exciton–exciton scattering occurred throughout a range of temperatures from 5 K to room temperature. At temperatures higher than 160 K, stimulated emission due to electron-hole plasma recombination was also observed with a higher excitation threshold than that of exciton–exciton scattering. The exciton binding energies of multiquantum wells were larger than that of bulk ZnO and increased with a decrease in the well widths. This enhancement of exciton binding energy is due to the quantum-confinement effect and is favorable for the stability of exciton states. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333687
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