Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
57 (1985), S. 5470-5476
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A study of ion-implanted zinc in GaAs has been made using three annealing techniques: e-beam, graphite strip heating, and furnace annealing in an arsine ambient. The highest hole concentrations, 7–8×1019 cm−3, were obtained using electron-beam annealing. Graphite strip heating and electron-beam annealing were able to electrically activate 100% of the implanted dose. The effect of strain on the activation of the zinc has been demonstrated by comparing chemical-vapor-deposited Si3N4 with reactively evaporated AlN encapsulants.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.334823
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