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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 6506-6514 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An examination of the complex oscillations and chaotic behavior observed in a model of the peroxidase-catalyzed oxidation of NADH is made via numerical simulation and a fast/slow variable analysis. The NADH is considered to be a slowly varying species, compared to oxygen and the two key free-radical intermediates in the mechanism. By considering NADH to be a parameter which modulates the dynamics of a reduced model composed of the remaining fast variables, the origin of the complex oscillations is elucidated. Possibilities for the origin of the observed chaotic behavior are also suggested by this approach. The observation of birhythmicity and metastable chaos in this system may also be related to the two inherent time scales in the kinetics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 1388-1396 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have investigated in detail the transition from stable steady state to chaos in the DOP model of the peroxidase–oxidase reaction. Two consecutive Hopf bifurcations give rise to toroidal oscillations. Chaotic oscillations occur after the circle map associated with the torus becomes noninvertible. The supercritical region of parameter space is characterized by a periodic-chaotic sequence in which the periodic states form severely, but systematically, pruned Farey trees. In terms of both the transition to chaos and the periodic-chaotic sequence, the DOP model appears to share important qualitative characteristics with a variety of oscillating chemical reaction systems and their models.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1-21 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the use of the Fabry–Perot laser interferometer in the fringe mode to measure velocities of fast-moving reflecting surfaces, and includes a review of previously published work. We begin by describing the theory of the Doppler shift that applies to these situations, and include an experimental test of whether surface normal direction affects Doppler shift. Formulas are derived for the analysis of the effects of shocked, dispersive, moving transparent media on velocity measurements, including expressions for the velocity of light in a moving medium with moving boundaries. The Fabry–Perot method is compared with other techniques such as the VISAR interferometer. We then describe in detail a standard configuration developed at our facilities, discuss other configurations using optical fibers and more than one cylinder lens, and describe a new laser amplifier developed specifically for velocimetry. Methods of alignment, instrument calibration, surface preparation, and operation are included. Next, we present several methods of analysis, the choice of which depends on the absolute accuracy required, and examine many sources of possible error. These analytical techniques allow the motion of surfaces of reflectivity of at least 1% to be measured with an absolute precision of 0.5%. Time resolution can be a few nanoseconds, and is traded off for velocity resolution. One can make continuous velocity records of surfaces whose reflectivity under shock loading decreases to less than 1% of its initial value. We have simultaneously recorded three distinct velocity–time histories without ambiguity.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1760-1762 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A good Si epitaxial growth rate on Ge (111) has been achieved at substrate temperatures as low as 350 °C thanks to the use of decomposed disilane in the catalytic chemical vapor deposition (CTL-CVD) method. For substrate temperatures in the (100–200 °C) range, an exposure of the Ge (111) wafer to decomposed disilane led to the formation of an amorphous silicon film. The growth rate of this Si layer was found to be several times higher when using decomposed disilane rather than undecomposed disilane. At substrate temperatures above 400 °C, an interdiffusion of Si into Ge occurred in both cases of disilane and decomposed disilane exposures.
    Type of Medium: Electronic Resource
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