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  • 1
    Electronic Resource
    Electronic Resource
    Group-theoretic solution of the scalar wave equation in a multiply connected domain (1994)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 35 (1994), S. 3230-3249 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The solution of the two-dimensional scalar Helmholtz wave equation is discussed in a domain consisting of N+2 boundaries wherein there is one central boundary and N circles are located symmetrically within a closed space such that the system as a whole has N-fold rotational symmetry. The general solution for this complicated domain has been found to reproduce the results corresponding to simpler structures with lesser number of boundaries. Furthermore, the rotational symmetry of the system is exploited to obtain the group-theoretic solution of the composite problem leading to symmetry-induced simplifications. The numerical results pertaining to the lowest and some of the higher modes are presented for N=1 and 2. The plot of the lowest eigenvalue as a function of eccentricity exhibits maximum for symmetric as well as antisymmetric modes whenever there are at least two inner boundaries. This behavior has universal character in the sense that the maximum shows up irrespective of the values of the geometrical parameters other than the eccentricity. The computations involving the group-theoretic aspects have been found to have fast convergence highlighting the significance of our approach to deal with the solution for a class of multidisciplinary problems coming within the purview of the Helmholtz equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.530463
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  • 2
    Electronic Resource
    Electronic Resource
    Configurational interference in boundary-value problems governed by the Helmholtz equation (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 829-833 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A rigorous approach is discussed for solving the two-dimensional Helmholtz equation in a multiply-connected domain consisting of a ring of N circles distributed symmetrically within a closed space. The outer boundary has been taken to be such that the system as a whole has N-fold rotational symmetry. The Dirichlet boundary condition has been satisfied exactly at the outer as well as at each of the inner edges, using the addition theorems for the cylindrical Bessel functions in conjugation with the Fourier expansions. Numerical results, showing spatial configurational interference, are presented for the lowest cutoff value of the symmetric mode as a function of separation between centers of two inner circles, in the case N=2 with circular outer boundary. The application of the method to various problems of physics and engineering is enunciated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528405
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  • 3
    Electronic Resource
    Electronic Resource
    Electron-beam evaporated phosphosilicate glass encapsulant for post-implant annealing of GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4194-4198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam deposited films of phosphosilicate (PSG) have been investigated as dielectrics for the encapsulation of Si-implanted GaAs for the purpose of post-implant annealing. The processing parameters that were optimized included the thickness of PSG film, the substrate temperature, and the annealing time and temperature. PSG films deposited at temperatures ≥300 °C showed no signs of deterioration up to temperatures in excess of 900 °C for 30-min anneals carried out in a forming gas and/or nitrogen ambient. Depth profiles in excellent agreement with the Lindhard–Scharff–Schiott curves were obtained with 1000-A(ring)-thick films when annealed at 850 °C for 30 min. The diffusion coefficient of implanted silicon was found to be an order of magnitude smaller for the PSG films than that for the conventional plasma assisted chemical vapor deposited SiO2 films at 850 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341334
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  • 4
    Electronic Resource
    Electronic Resource
    High-power, single-frequency diode-pumped Nd:YAG microcavity lasers at 1.3 μm (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1620-1622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-frequency output power of 210 mW on the 1.3 μm transition was obtained from a monolithic YAG laser doped with 4.2% Nd. Lasers fabricated from high Nd-concentration YAG crystals oscillated simultaneously on the 1.319 and 1.338 μm lines at high pump power, but in a single axial mode at both wavelengths. The oscillation frequency was continuously temperature-tunable at a rate of 3.6 GHz/ °C over a range of 170 GHz (10 A(ring)). The emission was linearly polarized with an extinction ratio (approximately-greater-than)1000:1. In two-wavelength operation, the 1.319 and 1.338 μm transitions were orthogonally polarized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112930
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of resistivity and Hall mobility in floating zone grown bulk silicon-germanium alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4341-4343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon germanium (Si1−xGex) alloys have been grown by the floating zone method with x varying from 0.5 to 20 wt %. Resistivity and Hall effect measurements have been carried out in the temperature range 80–410 K. The Hall mobility has been found to decrease with Ge concentration varying between 0.5 and 4.5 wt % and thereafter an increase has been observed. The Hall mobility has also been found to decrease with an increase in temperature in these alloys following the AT−y relation, where A is a constant and T is the temperature in K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350817
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of Si-implanted InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3753-3757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature integrated photoluminescence of Si-implanted n-type and semi-insulating wafers of single-crystal InP has been investigated as a technique for characterizing the quality of ion-implanted and annealed material. It was found that the intensity of the luminescence is a good indicator of the quality of the annealed samples. Using both rapid thermal annealing and conventional furnace annealing, not only was it possible to monitor the progressive activation of the implanted impurities, but we were also able to characterize the degradation occurring in the InP crystal due to the thermal exposure and to compare the results using different methods of surface protection. Combined with progressive wet etching of the implanted layers, it was also possible to use the photoluminescence response to spatially profile the activation and the degradation of the wafers. The results suggest that annealing, in general, is not able to restore the quality of the original unimplanted semiconductor and that even short transient anneal cycles can lead to detectable thermally induced material degradation, which extends many micrometers into the InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344036
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  • 7
    Electronic Resource
    Electronic Resource
    The Kelvin–Helmholtz instability in the presence of dust charge fluctuations (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2477-2479 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Kelvin–Helmholtz instability is examined by considering the dust charge fluctuations in a dusty plasma. Electrons and ions are assumed to be in Boltzmann equilibria and the dust grains to follow the fluid equations with a full adiabatic equation of state. The transverse shear in the flow parallel to the magnetic field is considered. The instability is found to grow for limiting wave numbers for a particular value of shear velocity. The effect of adiabatic dust plasma pressure is to enhance the growth rate of the instability. For dense plasma, growth of the instability is affected by the presence of dust charge fluctuations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872929
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  • 8
    Electronic Resource
    Electronic Resource
    Parametric coupling of a high-frequency electromagnetic wave to whistler and lower-hybrid waves in the ionosphere (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 386-391 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Parametric coupling of a high-frequency electromagnetic wave to an obliquely propagating whistler or lower-hybrid wave and a high-frequency sideband electromagnetic wave have been studied in the ionosphere. The growth rate of the three-wave resonant interaction process decreases with the frequency of the lower-hybrid wave and increases with whistler wave frequency. Growth rate is greater for the whistler wave than the lower-hybrid wave. The electromagnetic wave is scattered at a larger angle in the case of the lower-hybrid wave than the whistler wave. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871864
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  • 9
    Electronic Resource
    Electronic Resource
    Erratum: "Linear and nonlinear dust-acoustic waves in inhomogeneous dusty plasmas" [Phys. Plasmas 5, 94 (1998)] (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 2821-2821 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872974
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  • 10
    Electronic Resource
    Electronic Resource
    Linear and nonlinear dust-acoustic waves in inhomogeneous dusty plasmas (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 94-99 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The propagation of linear, as well as nonlinear, dust-acoustic waves in inhomogeneous dusty plasmas consisting of electrons, ions, and charged dust particles is investigated. It is shown that the amplitude of the dust-acoustic waves is affected by the presence of the dust density inhomogeneity. Amplitudes of the linear and nonlinear dust-acoustic waves decrease (increase) as the waves propagate in the direction of increasing (decreasing) density. The wave amplitude is inversely proportional to the square root of the dust particle's density for the linear dust-acoustic waves. In the nonlinear case, to the lowest order and for the cold dust species, the wave amplitude is found to be directly proportional to nd0−1/4. Various special cases are explicitly considered, and comparison with the corresponding results for the usual two-component electron-ion plasmas is also carried out. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872891
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