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  • 1
    Electronic Resource
    Electronic Resource
    Diffusion, sedimentation, and Taylor dispersion of a Brownian cluster subjected to a time-periodic external force: A micromodel of ac electrophoretic phenomena (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 5569-5579 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A generalized formulation of the Fokker–Planck equation is utilized to calculate the mean velocity and dispersivity of a flexible Brownian cluster of rigid particles which is acted upon by a time-periodic external force. It is shown that if the force consists of a nonzero mean part and a "fluctuating'' (i.e., zero mean) part, their effects are decoupled. Similarly, if a Fourier expansion of the force is carried out, the effect of each term of the expansion can be treated independently of the others. A representative force term of the form Fn exp(iωnt) +Fˆn exp(−iωnt) was selected to act upon a flexible dumbbell composed of two identical tethered spheres of radii a, with the inextensible tether acting as an "attractive'' internal potential. The dispersion tensor is found to consist of a "parallel'' contribution (directed along FnFˆn+FˆnFn) and a "hydrostatic'' contribution. This dispersion tensor depends linearly upon the scalar (Fn⋅Fˆn)a/24πμkT (μ=viscosity), approaches a constant asymptotic value for small nondimensional frequencies Ωn=12πμa3ωn/kT, and decreases asymptotically to zero for very large frequencies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458490
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of the bulk and surface electronic properties of HgCdTe epitaxial layers using photoelectromagnetic, Hall, and photoconductivity measurements (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2312-2321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work a method is presented that permits the evaluation of the bulk and surface electronic properties of p-type Hg0.77Cd0.23Te epilayers grown by metalorganic chemical-vapor-deposition and liquid-phase-epitaxy growth techniques. The method is based on fitting the generalized photoelectromagnetic expression to the experimental results obtained from photoelectromagnetic, Hall, and photoconductivity measurements. Values of electron mobility, electron diffusion length, bulk lifetime, surface recombination velocities at the front and at the back surfaces of the HgCdTe layer, and the absorption coefficient were derived as a function of temperature. It is found that the Shockley–Read–Hall recombination process is the dominant recombination mechanism both in the bulk and at the surface of the HgCdTe layers. The recombination centers are most likely related to metal vacancies. It is shown that a low value of surface recombination velocity is a fundamental property of the CdTe/HgCdTe interface. In particular, a surface recombination velocity of less than 5000 cm/s was measured at 77 K for HgCdTe with a CdTe cap, which is the lowest value reported for narrow-gap p-type HgCdTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351573
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrahigh vacuum study of indium oxide GaAs(110) interfaces (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 925-930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium oxide/n-GaAs(110) interfaces fabricated by means of reactive evaporation of indium in the presence of oxygen onto ultrahigh vacuum cleaved GaAs(110) have been studied by means of Auger electron spectroscopy and electron energy loss spectroscopy. The results show that the growth of the indium oxide layers at room temperature under a wide range of oxygen pressures followed the Stransky–Krastanov model. In all cases the presence of In clusters at the interface was observed, and at the high-pressure regime (∼ 1 × 10−4 Torr) some oxidation of the GaAs surface was noted as well. These results can be correlated to our earlier report [J. Appl. Phys. 69, 1494 (1991)] on the performance of diodes produced under high vacuum conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351768
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  • 4
    Electronic Resource
    Electronic Resource
    The d-d exchange interaction in the diluted magnetic semiconductor ZnFeS : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6087-6089 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the magnetic susceptibility of Zn1−xFexS (x≤0.03) and found typical Curie–Weiss behavior above 100 K. Based on the high temperature expansion series developed for Fe based diluted magnetic semiconductors, we estimated the exchange interaction constant between the nearest neighbors JNN=−37 K, which is the largest value for Fe-based diluted magnetic semiconductors studied so far.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353478
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and conductance evolution of very thin indium oxide films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2290-2292 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductance of transparent conducting oxide films as a function of their coverage has been investigated in situ. The films have been prepared by means of reactive evaporation of In in the presence of oxygen on the glass substrate at different substrate temperatures. The analysis shows that island growth, percolation, coalescence, and ohmic stages can be identified. Critical parameters of the films can be determined during the growth, such as anisotropic and percolative growth modes, resistivity, a lower limit of the effective dopant concentration. The technique shows a potential for in-depth characterization of very thin film growth. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112721
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  • 6
    Electronic Resource
    Electronic Resource
    Indium oxide Schottky junctions with InP and GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3251-3256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Junctions of transparent conducting oxides on III–V semiconductors have been prepared by deposition of indium oxide layers onto p-type InP and n-type GaAs by means of reactive evaporation of In in the presence of oxygen at different substrate temperatures. The electrical properties and chemical composition of these junctions have been investigated using current-voltage measurements in the dark at room temperature, capacitance-voltage measurements, and depth profiling by Auger electron spectroscopy. The best diodes were obtained by deposition at a substrate temperature near 250 °C and oxygen pressure of 5×10−4 Torr. These diodes exhibit a Schottky barrier height of 0.80 eV for n-type GaAs and 0.87 eV for p-type InP with an ideality factor of 1.04. The Schottky barrier height decreases with decreasing deposition temperature for both substrates. The roles of the tunneling–transparent interface layer and interface region are theoretically considered. It is shown that as the deposition temperature is increased, the barrier height increases due to the accompanying reduction in the density of surface states, which are induced by elemental In at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354570
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  • 7
    Electronic Resource
    Electronic Resource
    Magnetic properties of the diluted magnetic semiconductor Zn1−xCrxSe : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5745-5747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of a new diluted magnetic semiconductor Zn1−xCrxSe are reported. Specific heat was measured for 1.5 K≤T≤20 K and B≤3 T, whereas magnetization data were taken at T=2 and 4.2 K for magnetic field (B≤6 T) along (100), (110), and (111) crystallographic directions. The data are interpreted using the crystal-field model for the Cr++ ion, including static Jahn–Teller distortion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353558
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of deposition parameters on the properties of In2O3/InP junctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2264-2269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent conducting indium oxide films have been prepared by means of reactive evaporation of In onto p-type InP substrates at various deposition temperatures [in the range of 25 °C (RT)–330 °C] and under different oxygen pressures (in the range of 8×10−5 Torr up to 9×10−4 Torr). The chemical composition and structural properties of the films have been investigated using such analytical tools as Auger electron spectroscopy (AES), x-ray diffraction, and scanning electron microscopy (SEM). The combination of AES and SEM has proved to be extremely useful for interface analysis. The concentrations of oxidized and unoxidized (elemental) In in the tested samples have been investigated by deconvolution of the appropriate Auger MNN transitions using reference spectra of In2O3 and InP. The films were found to be polycrystalline at all deposition temperatures above RT under all the tested range of oxygen pressures. Nearly stoichiometric In2O3 films have been observed on all the investigated samples. Elemental In at the interfaces of films grown at low deposition temperatures has been noted. The effect of the oxygen pressure and deposition temperature on the films properties is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356290
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  • 9
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy of InxAl1−xAs epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7163-7169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface and interface electronic structure of mismatched InxAl1−xAs epitaxial layers grown by molecular beam epitaxy on InP have been investigated using surface photovoltage spectroscopy. The crystalline structure of the epilayers was also examined by double-crystal x-ray diffraction. For coherently strained layers, only a few gap states are identified. Highly strained samples with inferior crystalline quality, as judged by a broadened x-ray diffraction peak and the absence of Pendellosung fringes, display a rich spectrum of states in the band gap. Some of the states are close to the surface while others are located in the vicinity of the InAlAs/InP heterointerfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360425
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  • 10
    Electronic Resource
    Electronic Resource
    Evolution of the In oxide/Si(111) interface: Analysis by electron spectroscopies (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1196-1202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of thin In oxide layers on Si(111) substrate surfaces by reactive evaporation of In in oxygen atmosphere and the formation of the In oxide–Si interface under ultrahigh-vacuum conditions has been studied by Auger electron spectroscopy, electron-energy-loss spectroscopy, photoemission with use of synchrotron radiation, and inverse photoemission. Oxygen pressure and substrate temperature were varied as the parameters of the reactive evaporation. The combined electron spectroscopic results indicate that for In deposition onto room-temperature substrate surfaces and PO2〈5×10−5 mbar the interfacial layer contains metallic In and oxidized Si, but that for higher PO2 the metallic In concentration at the interface is reduced. The oxidation of In appears to be enhanced away from the In-Si interface, and for PO2(approximately-greater-than)5×10−5 mbar the oxide stoichiometry approaches that of In2O3. At elevated substrate temperature (250 °C) the growth rate of In oxide layers is reduced as compared to room temperature, but the oxidation yield at the interface is enhanced. For PO2=2×10−4 mbar and 250 °C substrate temperature the growth of a uniform near-stoichiometric In oxide layer is indicated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357845
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