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  • American Institute of Physics (AIP)  (18)
  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has recently been reported that Fe layers can couple through Pd interlayers, with at least one region of weak antiferromagnetic coupling.1 This system, with coupling fields of only a few tens of Gauss, is potentially attractive for low-field device applications. Additionally, compared to the case of multilayer systems based on noble metal spacer layers, the high paramagnetic susceptibility of Pd and its tendency to ferromagnetic order are expected to lead to modified coupling mechanisms. We report on the growth, structural properties, magnetic properties, and magnetotransport properties of epitaxial (100)Fe/Pd superlattices. Samples consisting of 10 bilayers, with Fe layer thicknesses ≈20 A(ring) and Pd layer thicknesses in the range 10–50 A(ring) (including in "wedge'' geometries), have been fabricated by molecular beam epitaxy onto (100)MgO substrates. The structure was characterized by reflection high-energy electron diffraction, x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The structural and magnetic properties of the multilayers are found to be highly dependent on the growth procedures. Optimized growth conditions, including in particular the absence of any buffer layers, result in overall coercive fields below 15 G and allow the detection of small coupling fields. Magnetization measurements unambiguously reveal the presence of a weak uniaxial anisotropy in the Fe layers, resulting in split hysteresis loops along one of the two in-plane 〈100〉Fe directions. These loops are similar to those normally associated with antiferromagnetic (AFM) coupling. No evidence of AFM coupling has been found in the present study. Magnetoresistance measurements show abrupt changes of resistivity of up to 1.5% at low temperatures, which can be well explained by anisotropy effects during rapid reversals of the Fe layers.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8006-8010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we give an overview of the domain duplication process which can occur in ferromagnetic sandwiches. A brief theoretical description of the process allows us to extract the main parameters governing the effect. It is shown that even if a domain structure exists in the hard electrode, no duplication can occur for a ferromagnetic coupling below a minimum value. Then, we address also the effects of residual domains on the nucleation field of the hard electrode to reconcile theory and experiments. © 2001 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7203-7205 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of magnetic domain walls (DWs) on magnetoresistance in various exchange-bias ferrimagnetic/(ferrimagnetic or ferromagnetic) bilayer systems (Gd68Fe32/Tb55Fe45 and Fe60Gd40/Fe55Sn45) is presented. These systems allow one to create well-defined DWs of various size and shape. The DW morphology is controlled by the applied magnetic field in the film plane. By changing the amplitude of the field, the DW thickness can be controlled, whereas the rotation of the field in plane allows one to create a θ° Bloch DW (90° DW, 180° DW,...). The electrical resistivity of the sample was measured relative to the applied magnetic field (amplitude and direction). The influence of the shape and size of the DW on magnetoresistance was followed. For the two amorphous samples, it made it possible to fit the variation of resistivity relative to the DW thickness and shape using a model based on anisotropic magnetoresistance. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6916-6918 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present positive and negative exchange bias (EB) phenomena observed in two ferrimagnetic-based amorphous bilayers systems: FeSn/FeGd and FeGd/TbFe. In both cases, magnetization measurements exhibit a shift of the loop of one of the ferrimagnetic layer towards a positive or negative field. In FeSn/FeGd, the coupling at the interface between the net magnetization of the two layers is antiferromagnetic, which leads to a positive shift. However in FeGd/TbFe bilayers, the coupling is ferromagnetic and the shift is negative. The EB phenomenon is attributed to the occurrence of a magnetic domain wall present at the interface, which can be "compressed" or "decompressed" by an external applied field. A simple model based on the competition between the Zeeman energy and the interface exchange interaction energy permits a good quantitative evaluation of the observed EB fields. © 2001 American Institute of Physics.
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown face-centered cubic (FCC) (111)- and (001)-oriented CoxPd1−x alloy films (x≈0.20–0.25) by molecular beam epitaxy on (111)Si and (001)MgO substrates, respectively, with thicknesses ≈200–1000 A(ring). Magnetization (SQUID) measurements show that both (111) and (100) films present a perpendicular easy axis, indicating that a strong magnetic anisotropy overcomes the demagnetizing field favoring the in-plane orientation. We have studied this magnetic anisotropy by combining SQUID and torque measurements. Our experimental results cannot be accounted for by only invoking the magnetocrystalline anisotropy of a disordered solid solution of Co in FCC Pd, and rather indicate an anisotropic distribution of Co in the Pd host.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4482-4484 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic and magnetoresistive properties of thin films deposited on periodically structured substrates are studied. We used a thermodynamical heat treatment to activate the step bunching phenomena on vicinal Si(111) substrates misoriented towards [112¯]. Then, Co or FeNi magnetic layers have been grown, with thicknesses ranging between 20 and 100 Å. Transmission electron microscopy experiments reveal a lateral pseudoperiodic variation of the epitaxial relationship of the metallic layers. Magnetometry measurements reveal an in-plane uniaxial magnetic anisotropy with the easy axis parallel to the step direction. We discuss the relative contributions of magnetocrystalline and shape effects to the anisotropy. Surprisingly, the angular dependance of the anisotropic magnetoresistance reveal a single-domain behavior and a magnetization reversal by rotation, with an active area as large as 700 μm×100 μm. We discuss the influence of the magnetic layer thickness on the magnetization reversal process. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 819-821 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of DyBaCuO have been achieved by molecular beam epitaxy. The films are strongly oriented with the c axis perpendicular to the substrate, and currently reach R=0 between 70 and 80 K. Critical temperatures (R=0) up to 50 K were obtained on 150-A(ring)-thick films deposited atomic layer by atomic layer. These films present a flat surface as observed by high-energy electron diffraction. We show that in this process, a nominal 1:2:3 composition is not sufficient for the obtention of flat superconducting film. A good accuracy in the number of atoms deposited for each atomic layer is required.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2829-2831 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single Co/Al2O3/NiFe and double Co/Al2O3/Co/Al2O3/NiFe planar tunnel junctions were grown by sputtering and subsequently patterned in a four-step process using optical lithography. The Al2O3 barriers are formed by radio frequency plasma oxidation of 1.5 nm aluminum layers. The double junctions exhibit three clear resistance levels depending on the relative configuration of the magnetizations. Both single and double junctions exhibit maximum magnetoresistance (MR) ratios above 10% at room temperature and 20% at 30 K and a decrease of MR with increasing bias voltage. With regard to its low bias value, the MR is reduced by a factor of 2 at 0.26 V for the single junctions and at values above 0.8 V for the double junctions. The decay of the MR of double junctions with bias voltage is significantly slower than expected from two independent junctions in series. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3299-3301 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Giant magnetoresistance (GMR) effects up to 10% have been observed in Co/Cu/FeNi spin valve structures grown onto step bunched vicinal Si(111) substrates misoriented towards [11-2]. The step bunching is activated using a simple thermal treatment which leads to surfaces where terraces alternate with facets at the nanometer scale. GMR of the spin valve structures is investigated with the current applied parallel or perpendicular to the steps. An in-plane uniaxial magnetic anisotropy is induced in each magnetic layer with the easy axis parallel to the steps. This results in square GMR behavior when the field is applied along the easy axis. Specific features observed when the field is applied along the hard axis are also shown to be the consequence of this anisotropy. When the initial misorientation angle of the substrate becomes higher than 4°, we observe an enhancement of the room-temperature GMR when the current is applied perpendicular to the steps. The origin of this enhancement is discussed based on the temperature dependence of this effect. © 1997 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2751-2753 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sensitive magnetic field detection devices have been fabricated based on the planar Hall effect. The active material consists of permalloy ultrathin films (6 nm thick) epitaxially grown by molecular beam epitaxy. Uniaxial magnetic anisotropy is induced in the film through ferromagnetic coupling with a Fe/Pd bilayer epitaxially grown on MgO(001). The active layer shows a magnetoresistive ratio ΔR/R=2%. The device gives a sensitivity of 100 V/TA and a minimum detectable field below 10 nT. The detector response is linear over at least four decades. The transverse resistivity is sensitive only to the anisotropic resistivity, and not to the isotropic resistivity term which is highly temperature sensitive. Consequently, the thermal noise at 1 Hz is reduced by four orders of magnitude compared to a similar longitudinal magnetoresistive detector. © 1995 American Institute of Physics.
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