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  • American Institute of Physics (AIP)  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Simultaneous dysprosium- and lead-substituted high-Tc superconductor bismuth cuprates (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6347-6352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The introduction of small amounts of Dy in ceramic BiSrCaCuO (BSCCO) with nominal composition of Bi2Sr2Ca1−xDyxCu2O8+z, Bi2Sr2Ca2−xDyxCu3O10+z, and Bi1.6Pb0.4Sr2Ca2−xDyxCu3O10+z with 0.1〈x〈0.3 was studied in both stoichiometric and nonstoichiometric compositions where the nonstoichiometric composition was used to aid the sintering process in order to obtain a maximum Tc and contained excesses of CaO and CuO. It was found that regardless of the sintering conditions and starting compositions only the Bi:Sr:Ca:Cu=2:2:1:2 (2212) phase was produced. The highest Tc (R=0) in the Dy-substituted sample obtained was 84 K and this was obtained only for the nonstoichiometric composition Bi1.6Pb0.4Sr2Ca2.5Dy0.3Cu3.5Ox which contained mostly the 2212 phase together with tiny amounts of Bi2Sr2Ca2Cu3Ox (2223) phase. High-resolution electron microscopy data performed on Bi1.6Pb0.4Sr2Ca2.5Dy0.3Cu3.5010+z show that the introduction of Dy in the original 2223 Pb-containing phase caused only the formation of the 2212 phase without changing the modulated structure known to occur in the substituted Bi and Sr BSCCO compounds confirming also earlier suggestions made by Tarrascon et al. [Phys. Rev. B 2, 4316 (1989)] that the rare-earth cations stabilize the 2212 phase and substitute only for Ca and not for the Sr or Bi sites in the 2212 phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346880
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  • 2
    Electronic Resource
    Electronic Resource
    Dark current transients in SbI3-doped HgI2 crystals (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2921-2924 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transient characteristics of the dark current have been measured in SbI3-doped HgI2 single crystals as a function of voltage and temperature for different dopant concentrations. The doping by Sb3+ was found to introduce a hole trapping level 0.5-eV deep, with a density which was of the same order of magnitude as the SbI3 content. The room-temperature effective hole mobility was 5×10−8 cm2/V s for 1.5 wt.% dopant content, as compared to about 2×10−6 cm2/V s for 0.1 wt.% dopant content. Previous results obtained with undoped crystals showed an effective mobility of 5×10−7 cm2/V s, but the trap depth was different, 0.7 eV, and the concentration was much lower, only of the order of 1015 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337837
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  • 3
    Electronic Resource
    Electronic Resource
    Dark current transients in HgI2 single crystals used as γ- and x-ray spectrometers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1944-1950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient characteristics of dark currents have been measured in HgI2 single crystals as functions of voltage and temperature. The existence of a hole trapping center, 0.7 eV deep and of density ∼1015 cm−3, was established, which effectively lowers the hole drift mobility by about seven orders of magnitude. The samples were found to be slightly extrinsic n type, the Fermi level being 0.9 eV deep. The room-temperature electron density was about 2×103 cm−3. The meaning of these characteristics to the performances of HgI2 γ- and x-ray spectrometers is discussed. Particularly, it is suggested that lowering of the HgI2 detector operation temperature to about 0 °C will improve its energy resolution capabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334429
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  • 4
    Electronic Resource
    Electronic Resource
    The nonexistence of α' high-temperature phase of HgI2 (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4769-4770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Differential scanning calorimetry measurements of mercuric iodide (HgI2 ) do not suggest the existence of the α'-HgI2 phase, as previously reported, when the necessary precautions are taken to avoid any chemical reaction with the sample holder. This conclusion is supported by variable temperature Raman spectroscopic measurements performed in the vicinity of the melting point, where the α' was supposed to exist.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340105
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  • 5
    Electronic Resource
    Electronic Resource
    Dependence of superconducting properties of thin films of YBa2Cu3O7−x on structural parameters of the films and substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 970-972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature superconducting (HTS) properties such as critical current Jc (77 K) of up to 4×106 A/cm2, microwave surface resistance, Rs (77 K and 50.8 GHz) as low as 15 mΩ and Tc(R=0) of up to 91 K have been measured for YBa2Cu3O7−x, YBCO, layers prepared by pulsed laser deposition on MgO and (11¯02) Al2O3 buffered with yttrium stabilized zirconia (YSZ). The following x-ray structural parameters have been measured: percentage of residual (200) or (103) lines, value of c-axis parameter, percentage of (111) unwanted lines in (100) YSZ buffer layers, ratio of 〈100〉 to 〈110〉 orientation in the basal plane as determined by double crystal diffraction phi-scan and full width half maximum (FWHM) of (005) rocking curve. It was found that the most critical structural parameter is the substrate quality and 100% 〈100〉 basal plane orientation of the individual grains.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107744
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  • 6
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposited layers of stabilized zirconia on sapphire as a substrate for laser ablated YBa2Cu3O7−x thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Substrates of (11¯02) sapphire single crystals were covered with Y2O3 stabilized ZrO2 (YSZ) thin films deposited from 2,2,6,6 tetramethyl-3, 5-heptanedione precursors of Zr and Y by organometallic chemical vapor deposition. The YSZ layers were indeed oriented on the (100) planes as established by x-ray diffraction. Thin films of YBa2Cu3O7−x (YBCO) were then deposited on top of the YSZ layer by laser ablation. A critical temperature (R=0) of 90 K was obtained which is among the highest observed for YSZ. However, the critical current density at 77 K was only of the order of 103 A/cm2, which is common of polycrystalline YBCO deposited on YSZ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104668
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