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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 53-59 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model for radiative transport of electronic excitation energy in solution is presented and applied to the time-resolved and steady-state fluorescence of DPA (9, 10-diphenylanthracene) in benzene. The model predicts a nonexponential and wavelength-dependent decay at high concentrations, in agreement with experimental results. Recovered parameters, along with the time-resolved emission spectrum, are interpreted on the basis of a progression of the excitation with time farther into the cell, after the excitation pulse.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 6341-6349 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The donor ensemble excitation decay is obtained by a Monte Carlo simulation for the three-dimensional case. Donor and acceptor reorientational motions are explicitly considered within the isotropic diffusion model. Allowance is made for donor and acceptor different rotational rates. The orientation dependent part of the decay is fully contained in the factor 〈(∼(κ2))1/2〉 which is the ensemble average of the square root of the finite time average of the usual orientational factor κ2. The time dependence of 〈(∼(κ2))1/2〉 is evaluated by a Monte Carlo simulation procedure for several relative mobilities of the donor–acceptor pair and finally captured in a simple, one-parameter formula.
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1817-1824 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model for reversible monomer–excimer kinetics is developed, taking into account that different distributions of monomers around the excited ones are created by light absorption and excimer dissociation. The excimer formation rate coefficient departs from the Collins–Kimball equation owing to reversibility, originating significant deviations to Birks' kinetics in the monomer and excimer decays. The contribution of the geminate pair created by excimer dissociation on the overall kinetics is significant for low monomer concentrations and high viscosities. Simultaneous analysis of the monomer and excimer decay curves according to the model developed should allow to extract all the relevant information concerning the excimer formation diffusion controlled process.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 8048-8055 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Fluorescence depolarization by energy transfer resulting from dipole–dipole interaction (Förster type) is studied in donor–acceptor pairs of like and unlike chromophores at a fixed distance and with random and uncorrelated static orientations. For unlike chromophores, the acceptor anisotropy decay is shown to display three different extreme types of behavior. When the intrinsic decay rate of the acceptor is much faster than both the transfer rate and the donor intrinsic decay rate, the acceptor anisotropy decays from a positive value, then rises and passes through a maximum, and finally tends to a negative limiting value, yielding a zero steady-state value. The existence of a maximum is shown to be due to the peculiar relation between the orientation factor and the average angle formed by the donor and acceptor transition moments. For pairs of like chromophores, the exact anisotropy is calculated and compared with that given by an approximate treatment. It is also shown that the anisotropy of the indirectly excited partner varies with time, tending to zero, in contradiction to previous work, where it is reported to be 4% of that of the directly excited chromophore.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2417-2419 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements on a single quantum well infrared detector with its peak responsivity at 5.3 μm show a large Stark shift under bias. The detector has one graded barrier to enhance the effect of an electric field on the subband spacing. Several times greater change in the intersubband transition energy with applied field is obtained this way compared to the square well. Calculations show an even larger Stark shift possible with a stepped well structure.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1430-1432 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the realization of a high quality electron system with variable areal density (ns ) in a selectively doped, parabolic Ax Ga1−x As well. For each ns, quantum oscillations in the magnetoresistance are analyzed to obtain the electron densities of the electric subbands. These densities are in good agreement with the predictions of self-consistent calculations of the subband structure. The data reveal that with increasing ns , the width of the electron system increases so that the effective three-dimensional density and the Fermi energy remain essentially constant. The dependence of the low-temperature electron mobility on ns is also reported.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1445-1447 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of substrate temperature Ts during growth by molecular beam epitaxy on the migration of Si atoms in δ-(or planar) doped GaAs and Al0.25Ga0.75As using secondary-ion mass spectrometry (SIMS). Our results for δ-doped GaAs illustrate a measurable spread of Si that increases by ∼80 A(ring) as Ts is varied from 580 to 640 °C. For comparable Ts, the Si spreads further (by ∼350 A(ring)) in δ-doped Al0.25Ga0.75As. For Ts〈580 °C, the width of the Si profiles is determined by the resolution of our SIMS measuring technique. Magnetotransport measurements were also performed on these structures in order to determine the spreading of the dopants. The Si migration measured by SIMS is in qualitative agreement with the transport results; however, the SIMS data indicate larger Si areal densities. Two mechanisms, autocompensation and the electron localization by a DX center, are believed to be responsible for the latter observation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 840-842 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin-layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low-temperature ((approximately-equal-to)4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of (approximately-equal-to)5×1011 cm−2—a factor of four improvement over the highest mobility reported for inverted interfaces.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 603-603 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7186-7190 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm band is the predominant feature in the core emission. The evolution of this band during electron irradiation suggests possible emission mechanisms. In addition, two infrared emissions at about 915 and 1390 nm are detected. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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