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  • 1
    Electronic Resource
    Electronic Resource
    Monolayer to bilayer transition in reflection high-energy electron diffraction intensity oscillations during Si(001) molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2417-2418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of a thermally driven monolayer to bilayer transition in the period of reflection high-energy electron diffraction oscillations during molecular beam epitaxy on Si(001). This behavior is reproduced in a Monte Carlo growth simulation, from which we infer the origin of the transition results from the competition between incorporation and diffusion kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101093
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  • 2
    Electronic Resource
    Electronic Resource
    Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 795-796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose doped-thin-Si-film single-electron transistors (DS-SETs), which are fabricated from a highly doped Si film in a silicon-on-insulator substate by electron-beam lithography with a high-resolution resist (calixarene) and dry etching with CF4 gas. Because the structure can be well controlled, the DS-SET with a 45-nm-diam island shows nearly ideal characteristics of SETs with a charging energy of 1.4 meV. The results demonstrate that single-electron tunneling occurs through a single island without any isolated islands formed in potential fluctuations. We also discuss the discreteness of energy levels in a Si island. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120896
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  • 3
    Electronic Resource
    Electronic Resource
    Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 301-303 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated a chloromethylated calixarene, p-chloromethylmethoxcalix[n]arene (CMC[n]AOMe) (n=5,6,7), as a negative resist in electron-beam lithography. Each CMC[n]AOMe resist has a resolution of about 12 nm and a sensitivity of about 0.8 mC/cm2 which varies slightly with n (or molecular weight). A sub-10-nm Si wire has been fabricated by halide plasma etching and a CMC[n]AOMe resist as an etching mask. Because the resist pattern edge is smooth, Si wires with 7-nm width and 10-μm length were performed without any breaking. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126957
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  • 4
    Electronic Resource
    Electronic Resource
    Direct observation of hot-electron energy distribution in silicon metal–oxide–semiconductor field-effect transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1113-1115 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly observed the energy distributions of hot electrons in Si metal–oxide–semiconductor field-effect transistors. We used a lateral hot-electron transistor employing two potential barriers (an emitter barrier and a collector barrier) that divided the Si surface into three regions (the emitter, base, and collector). For an emitter-base voltage of −1.04 V, hot electrons with an excess energy of 0.7 eV were detected at the collector. The ratio of hot electrons to the injected electrons was 1.3%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124613
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  • 5
    Electronic Resource
    Electronic Resource
    Characteristic length of hot-electron transport in silicon metal–oxide–semiconductor field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2618-2620 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic length of hot-electron transport in an inversion layer at a Si surface is estimated by using lateral hot electron transistor, which has an upper gate and two lower gates. The inversion layer formed by biasing the upper-gate voltage is separated into three channel regions (the emitter, collector, and base) by the two lower gates. We find that the characteristic length depends on both the upper-gate voltage and the injection energy and ranges from 19 to 27 nm. These results show that hot electrons are affected by electron–electron scattering or surface–roughness scattering and that hot-electron transport plays a crucial role in Si metal–oxide–semiconductor field effect transistors with gate lengths of 20 nm or less. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126427
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  • 6
    Electronic Resource
    Electronic Resource
    Single-electron memory using carrier traps in a silicon nitride layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3555-3557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron memory that utilizes carrier traps in a silicon nitride layer is proposed and experimentally demonstrated. The proposed device consists of an insulating three-layered memory node structure formed on a silicon substrate and a highly sensitive aluminum single-electron transistor that detects the written information. Successful memory operation is demonstrated with two types of write modes (slow/rapid) that depend on the state of the Si channel underneath. Carrier retention time is estimated to be around 45 min. Possibilities for both destructive and nondestructive readout are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124159
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  • 7
    Electronic Resource
    Electronic Resource
    Space-charge-limited injection in n+-i-n+ structures fabricated by a focused ion beam (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3159-3161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport characteristics of n+-i-n+ structures fabricated on a GaAs/AlGaAs HEMT wafer are presented. An insulating strip (i) between two-dimensional electron gases (n+) is created by a single line scan of a focused ion beam. At sufficiently large biases, the current–voltage (I–V) characteristics of the n+-i-n+ structures display highly linear increases of the currents as a function of the biases. The observed I–V's are quantitatively explained by the space-charge-limited injection into the insulating region when the bias is large enough for the flatband condition. The charged defect density and the length of the insulating region are obtained from the I–V characteristics. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115148
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  • 8
    Electronic Resource
    Electronic Resource
    Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1384-1389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports a method for evaluating thickness and the carrier concentration of n type GaAs epitaxial layers simultaneously by employing nondestructive, contactless infrared spectroscopic ellipsometry. The carrier concentration Nc and layer thickness d were correctly measured for carrier concentration over 5×1017 cm−3 with the method by simply assuming the plasma oscillation of free carriers and a step function carrier profile. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366841
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  • 9
    Electronic Resource
    Electronic Resource
    Additivity of ballistic electrons (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3182-3184 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The additivity of ballistic electron beams is confirmed in the mesoscopic regime. Two ballistic electron beams are injected simultaneously from different injectors and cross each other at a collector. The voltage drop at the collector is proven to be equivalent to the algebraic sum of those separately obtained when each electron beam is individually injected from a corresponding injector. The additivity is considered to be valid based on the fact that the mean distance between the ballistic electrons is much larger than the screening length. Confirming of additivity is essentially important in designing new functional devices such as a synapse for neural networks in the ballistic regime. The quantum interference effect is also observed in the same sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110192
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  • 10
    Electronic Resource
    Electronic Resource
    Carrier traps in a GaAs/AlxGa1−xAs single electron transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2861-2863 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study carrier traps in a single electron transistor fabricated from a GaAs/AlxGa1−xAs heterostructure. In the heterointerface, there are many kinds of defects, which induce various trap levels in the band gap of AlxGa1−xAs or GaAs. The current through the transistor switches between two states because of trapping and detrapping of a single electron. The gate voltage dependencies of the switching indicate how the traps are spatially distributed. The possibility of the existence of a trap with multilevels is also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116349
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